XMC4300

XMC4000 Family

Microcontroller Series for Industrial Applications

ARM® Cortex®-M4

32-bit processor core

Datasheet

About this Document

This datasheet is addressed to embedded hardware and software developers. It provides the reader with detailed descriptions about the ordering designations, available features, electrical and physical characteristics of the XMC4300 series devices.

The document describes the characteristics of a superset of the XMC4300 series devices. For simplicity, the various device types are referred to by the collective term XMC4300 throughout this manual.

XMC4000 Family User Documentation

The set of user documentation includes:

Reference Manual
- describes the functionality of the superset of devices.
Datasheets
- list the complete ordering designations, available features and electrical characteristics of derivative devices.
Errata Sheets
- list deviations from the specifications given in the related Reference Manual or Datasheets. Errata Sheets are provided for the superset of devices.

Attention:

Please consult all parts of the documentation set to attain consolidated knowledge about your device.

Application related guidance is provided by

Users Guides

and

Application Notes

Please refer to

http://www.infineon.com/xmc4000

to get access to the latest versions of those documents.

Summary of Features

The XMC4300 devices are members of the XMC4000 Family of microcontrollers based on the ARM Cortex-M4 processor core. The XMC4000 is a family of high performance and energy efficient microcontrollers optimized for Industrial Connectivity, Industrial Control, Power Conversion, Sense & Control.

CPU Subsystem

CPU Core
- High Performance 32-bit ARM Cortex-M4 CPU
- 16-bit and 32-bit Thumb2 instruction set
- DSP/MAC instructions
- System timer (SysTick) for Operating System support
Floating Point Unit
Memory Protection Unit
Nested Vectored Interrupt Controller
General Purpose DMA with up-to 8 channels
Event Request Unit (ERU) for programmable processing of external and internal service requests
Flexible CRC Engine (FCE) for multiple bit error detection

On-Chip Memories

16 KB on-chip boot ROM
64 KB on-chip high-speed program memory
64 KB on-chip high speed data memory
256 KB on-chip Flash Memory with 8 KB instruction cache

Communication Peripherals

Ethernet MAC module capable of 10/100 Mbit/s transfer rates
EtherCATSlave interface (ECAT) capable of 100 Mbit/s transfer rates with 2 MII ports, 8 Fieldbus Memory Management Units (FMMU), 8 Sync Manager, 64 bit distributed clocks
Universal Serial Bus, USB 2.0 host, Full-Speed OTG, with integrated PHY
Controller Area Network interface (MultiCAN), Full-CAN/Basic-CAN with 2 nodes, 64 message objects (MO), data rate up to 1 MBaud
Four Universal Serial Interface Channels (USIC),providing 4 serial channels, usable as UART, double-SPI, quad-SPI, IIC, IIS and LIN interfaces
LED and Touch-Sense Controller (LEDTS) for Human-Machine interface
SD and Multi-Media Card interface (SDMMC) for data storage memory cards

Analog Frontend Peripherals

Two Analog-Digital Converters (VADC) of 12-bit resolution, 8 channels each, with input out-of-range comparators
Digital-Analog Converter (DAC) with two channels of 12-bit resolution

Industrial Control Peripherals

One Capture/Compare Units 8 (CCU8) for motor control and power conversion
Two Capture/Compare Units 4 (CCU4) for use as general purpose timers
Window Watchdog Timer (WDT) for safety sensitive applications
Die Temperature Sensor (DTS)
Real Time Clock module with alarm support
System Control Unit (SCU) for system configuration and control

Input/Output Lines

Programmable port driver control module (PORTS)
Individual bit addressability
Tri-stated in input mode
Push/pull or open drain output mode
Boundary scan test support over JTAG interface

On-Chip Debug Support

Full support for debug features: 6 breakpoints, CoreSight, trace
Various interfaces: ARM-JTAG, SWD, single wire trace

Ordering Information

The ordering code for an Infineon microcontroller provides an exact reference to a specific product. The code “XMC4<DDD>-<Z><PPP><T><FFFF>” identifies:

<DDD> the derivatives function set
<Z> the package variant
- E: LFBGA
- F: LQFP
- Q: VQFN
<PPP> package pin count
<T> the temperature range:
- F: -40°C to 85°C
- K: -40°C to 125°C
<FFFF> the Flash memory size

For ordering codes for the XMC4300 please contact your sales representative or local distributor.

This document describes several derivatives of the XMC4300 series, some descriptions may not apply to a specific product. Please see

Device Types

For simplicity the term

XMC4300

is used for all derivatives throughout this document.

Device Types

These device types are available and can be ordered through Infineon’s direct and/or distribution channels.

Table 1. Synopsis of XMC4300 Device Types
Derivative ¹	Package	Flash Kbytes	SRAM Kbytes
XMC4300-F100x256	PG-LQFP-100	256	128

Device Type Features

The following table lists the available features per device type.

Table 2.Features of XMC4300 Device Types
Derivative ²	LEDTS Intf.	SD MMC Intf.	ETH Intf.	ECAT Slave Intf.	USB Intf.	USIC Chan.	MultiCAN Nodes, MO
XMC4300-F100x256	1	1	RMII	2 x MII	1	2 x 2	N0, N1 MO[0..63]

Table 3.Features of XMC4300 Device Types
Derivative ³	ADC Chan.	DAC Chan.	CCU4 Slice	CCU8 Slice
XMC4300-F100x256	16	2	2 x 4	1 x 4

Definition of Feature Variants

The XMC4300 types are offered with several memory sizes and number of available VADC channels. Table 4 describes the location of the available Flash memory, Table 5 describes the location of the available SRAMs, Table 6 the available VADC channels.

Table 4.Flash Memory Ranges
Total Flash Size	Cached Range	Uncached Range
256 Kbytes	0800 0000 – 0803 FFFF	0C00 0000 – 0C03 FFFF

Table 5.SRAM Memory Ranges
Total SRAM Size	Program SRAM	System Data SRAM
128 Kbytes	1FFF 0000 – 1FFF FFFF	2000 0000 – 2000 FFFF

Table 6.ADC Channels ⁴
Package	VADC G0	VADC G1
PG-LQFP-100	CH0..CH7	CH0..CH7

Identification Registers

The identification registers allow software to identify the marking.

Table 7.XMC4300 Identification Registers
Register Name	Value	Marking
SCU_IDCHIP	0004 3001	AA
JTAG IDCODE	101D F083	AA

General Device Information

This section summarizes the logic symbols and package pin configurations with a detailed list of the functional I/O mapping.

Logic Symbols

Figure 2. XMC4300 Logic Symbol PG-LQFP-100

Pin Configuration and Definition

The following figures summarize all pins, showing their locations on the four sides of the different packages.

Figure 3. XMC4300 PG-LQFP-100 Pin Configuration (top view)

Package Pin Summary

The following general scheme is used to describe each pin:

Table 8.Package Pin Mapping Description
Function	Package A	Package B	...	Pad Type	Notes
Name	N	Ax	...	A2

The table is sorted by the “Function” column, starting with the regular Port pins (Px.y), followed by the dedicated pins (i.e. $\bar{P O R S T}$ ) and supply pins.

The following columns, titled with the supported package variants, lists the package pin number to which the respective function is mapped in that package.

The “Pad Type” indicates the employed pad type (A1, A1+, A2, special=special pad, In=input pad, AN/ DIG_IN=analog and digital input, Power=power supply). Details about the pad properties are defined in the Electrical Parameters.

In the “Notes”, special information to the respective pin/function is given, that is deviations from the default configuration after reset. Per default the regular Port pins are configured as direct input with no internal pull device active.

Table 9.Package Pin Mapping
Function	LQFP-100	Pad Type	Notes
P0.0	2	A1+
P0.1	1	A1+
P0.2	100	A2
P0.3	99	A2
P0.4	98	A2
P0.5	97	A2
P0.6	96	A2
P0.7	89	A2	After a system reset, via HWSEL this pin selects the DB.TDI function.
P0.8	88	A2	After a system reset, via HWSEL this pin selects the $\bar{D B . T R S T}$ function, with a weak pull-down active.
P0.9	4	A2
P0.10	3	A1+
P0.11	95	A1+
P0.12	94	A1+
P1.0	79	A1+
P1.1	78	A1+
P1.2	77	A2
P1.3	76	A2
P1.4	75	A1+
P1.5	74	A1+
P1.6	83	A2
P1.7	82	A2
P1.8	81	A2
P1.9	80	A2
P1.10	73	A1+
P1.11	72	A1+
P1.12	71	A2
P1.13	70	A2
P1.14	69	A2
P1.15	68	A2
P2.0	52	A2
P2.1	51	A2	After a system reset, via HWSEL this pin selects the DB.TDO function.
P2.2	50	A2
P2.3	49	A2
P2.4	48	A2
P2.5	47	A2
P2.6	54	A1+
P2.7	53	A1+
P2.8	46	A2
P2.9	45	A2
P2.10	44	A2
P2.14	41	A2
P2.15	40	A2
P3.0	7	A2
P3.1	6	A2
P3.2	5	A2
P3.3	93	A1+
P3.4	92	A1+
P3.5	91	A2
P3.6	90	A2
P4.0	85	A2
P4.1	84	A2
P5.0	58	A1+
P5.1	57	A1+
P5.2	56	A1+
P5.7	55	A1+
P14.0	31	AN/DIG_IN
P14.1	30	AN/DIG_IN
P14.2	29	AN/DIG_IN
P14.3	28	AN/DIG_IN
P14.4	27	AN/DIG_IN
P14.5	26	AN/DIG_IN
P14.6	25	AN/DIG_IN
P14.7	24	AN/DIG_IN
P14.8	37	AN/DAC/DIG_IN
P14.9	36	AN/DAC/DIG_IN
P14.12	23	AN/DIG_IN
P14.13	22	AN/DIG_IN
P14.14	21	AN/DIG_IN
P14.15	20	AN/DIG_IN
P15.2	19	AN/DIG_IN
P15.3	18	AN/DIG_IN
P15.8	39	AN/DIG_IN
P15.9	38	AN/DIG_IN
HIB_IO_0	14	A1 special	At the first power-up and with every reset of the hibernate domain this pin is configured as open-drain output and drives "0". As output the medium driver mode is active.
HIB_IO_1	13	A1 special	At the first power-up and with every reset of the hibernate domain this pin is configured as input with no pull device active. As output the medium driver mode is active.
USB_DP	9	special
USB_DM	8	special
TCK	67	A1	Weak pull-down active.
TMS	66	A1+	Weak pull-up active. As output the strong-soft driver mode is active.
$\bar{P O R S T}$	65	special	Weak pull-up permanently active, strong pull-down controlled by EVR.
XTAL1	61	clock_IN
XTAL2	62	clock_O
RTC_XTAL1	16	clock_IN
RTC_XTAL2	15	clock_O
VBAT	17	Power	When VDDP is supplied VBAT has to be supplied as well.
VBUS	10	special
VAREF	33	AN_Ref
VAGND	32	AN_Ref
VDDA	35	AN_Power
VSSA	34	AN_Power
VDDC	12	Power
VDDC	42	Power
VDDC	64	Power
VDDC	86	Power
VDDP	11	Power
VDDP	43	Power
VDDP	60	Power
VDDP	87	Power
VSS	59	Power
VSSO	63	Power
VSS	Exp. Pad	Power	Exposed Die Pad The exposed die pad is connected internally to VSS. For proper operation, it is mandatory to connect the exposed pad directly to the common ground on the board. For thermal aspects, please refer to the Datasheet. Board layout examples are given in an application note.

Port I/O Functions

The following general scheme is used to describe each Port pin:

Table 10.Port I/O Function Description
Function	Outputs			Inputs
Function	ALT1	ALTn	HWO0	HWI0	Input	Input
P0.0		MODA.OUT	MODB.OUT	MODB.INA	MODC.INA
Pn.y	MODA.OUT				MODA.INA	MODC.INB

Pn.y is the port pin name, defining the control and data bits/registers associated with it. As GPIO, the port is under software control. Its input value is read via Pn_IN.y, Pn_OUT defines the output value.

Up to four alternate output functions (ALT1/2/3/4) can be mapped to a single port pin, selected by Pn_IOCR.PC. The output value is directly driven by the respective module, with the pin characteristics controlled by the port registers (within the limits of the connected pad).

The port pin input can be connected to multiple peripherals. Most peripherals have an input multiplexer to select between different possible input sources.

The input path is also active while the pin is configured as output. This allows to feedback an output to on-chip resources without wasting an additional external pin.

By Pn_HWSEL it is possible to select between different hardware “masters” (HWO0/HWI0). The selected peripheral can take control of the pin(s). Hardware control overrules settings in the respective port pin registers.

Port I/O Function Table

Table 11.Port I/O Functions
Function	Output					Input
Function	ALT1	ALT2	ALT3	ALT4	HWO0	HWI0	Input	Input	Input	Input	Input	Input	Input	Input
P0.0	ECAT0. PHY_RST	CAN. N0_TXD	CCU80. OUT21	LEDTS0. COL2			U1C1. DX0D	ETH0. CLK_RMIIB	ERU0. 0B0					ETH0. CLKRXB
P0.1	USB. DRIVEVBUS	U1C1. DOUT0	CCU80. OUT11	LEDTS0. COL3				ETH0. CRS_DVB	ERU0. 0A0				ECAT0. P1_RX_CLA	ETH0. RXDVB
P0.2	ECAT0. P1_TXD2	U1C1. SELO1	CCU80. OUT01		U1C0. DOUT3	U1C0. HWIN3	ETH0. RXD0B		ERU0. 3B3
P0.3	ECAT0. P1_TXD3		CCU80. OUT20		U1C0. DOUT2	U1C0. HWIN2	ETH0. RXD1B			ERU1. 3B0
P0.4	ETH0. TX_EN		CCU80. OUT10		U1C0. DOUT1	U1C0. HWIN1		U1C0. DX0A	ERU0. 2B3				ECAT0. P1_RXD3A
P0.5	ETH0. TXD0	U1C0. DOUT0	CCU80. OUT00		U1C0. DOUT0	U1C0. HWIN0		U1C0. DX0B		ERU1. 3A0			ECAT0. P1_RXD2A
P0.6	ETH0. TXD1	U1C0. SELO0	CCU80. OUT30					U1C0. DX2A	ERU0. 3B2		CCU80. IN2B		ECAT0. P1_RXD1A
P0.7	WDT. SERVICE_OUT	U0C0. SELO0	ECAT0. LED_ERR			DB. TDI	U0C0. DX2B		ERU0. 2B1		CCU80. IN0A	CCU80. IN1A	CCU80. IN2A	CCU80. IN3A
P0.8	SCU. EXTCLK	U0C0. SCLKOUT	ECAT0. LED_RUN			$\bar{D B .}$ $\bar{T R S T}$	U0C0. DX1B		ERU0. 2A1		CCU80. IN1B
P0.9		U1C1. SELO0	CCU80. OUT12	LEDTS0. COL0	ETH0. MDO	ETH0. MDIA	U1C1. DX2A	USB. ID	ERU0. 1B0				ECAT0. P1_RX_DVA
P0.10	ETH0. MDC	U1C1. SCLKOUT	CCU80. OUT02	LEDTS0. COL1			U1C1. DX1A		ERU0. 1A0				ECAT0. P1_TX_CLA
P0.11	ECAT0. P1_LINK_ACT	U1C0. SCLKOUT	CCU80. OUT31		$\bar{S D M M C .}$ $\bar{R S T}$		ETH0. RXERB	U1C0. DX1A	ERU0. 3A2				ECAT0. P1_RXD0A
P0.12		U1C1. SELO0	CCU40. OUT3		ECAT0. MDO	ECAT0. MDIA		U1C1. DX2B	ERU0. 2B2
P1.0		U0C0. SELO0	CCU40. OUT3	ERU1. PDOUT3			U0C0. DX2A		ERU0. 3B0		CCU40. IN3A			ECAT0. P0_TX_CLA
P1.1		U0C0. SCLKOUT	CCU40. OUT2	ERU1. PDOUT2		SDMMC. SDWC	U0C0. DX1A		ERU0. 3A0		CCU40. IN2A			ECAT0. P0_RX_CLA
P1.2	ECAT0. P0_TXD3		CCU40. OUT1	ERU1. PDOUT1	U0C0. DOUT3	U0C0. HWIN3				ERU1. 2B0	CCU40. IN1A
P1.3	ECAT0. P0_TX_ENA	U0C0. MCLKOUT	CCU40. OUT0	ERU1. PDOUT0	U0C0. DOUT2	U0C0. HWIN2				ERU1. 2A0	CCU40. IN0A
P1.4	WDT. SERVICE_OUT	CAN. N0_TXD	CCU80. OUT33		U0C0. DOUT1	U0C0. HWIN1	U0C0. DX0B	CAN. N1_RXDD	ERU0. 2B0		CCU41. IN0C			ECAT0. P0_RXD0A
P1.5	CAN. N1_TXD	U0C0. DOUT0	CCU80. OUT23		U0C0. DOUT0	U0C0. HWIN0	U0C0. DX0A	CAN. N0_RXDA	ERU0. 2A0	ERU1. 0A0	CCU41. IN1C			ECAT0. P0_RXD1A
P1.6	ECAT0. P0_TXD0	U0C0. SCLKOUT			SDMMC. DATA1_OUT	SDMMC. DATA1_IN
P1.7	ECAT0. P0_TXD1	U0C0. DOUT0		U1C1. SELO2	SDMMC. DATA2_OUT	SDMMC. DATA2_IN
P1.8	ECAT0. P0_TXD2	U0C0. SELO1		U1C1. SCLKOUT	SDMMC. DATA4_OUT	SDMMC. DATA4_IN
P1.9	U0C0. SCLKOUT			U1C1. DOUT0	SDMMC. DATA5_OUT	SDMMC. DATA5_IN								ECAT0. P0_RX_DVA
P1.10	ETH0. MDC	U0C0. SCLKOUT		ECAT0. LED_ERR		$\bar{S D M M C .}$ $\bar{S D C D}$					CCU41. IN2C			ECAT0. P0_RXD2A
P1.11	ECAT0. LED_STATE_R UN	U0C0. SELO0		ECAT0. LED_RUN	ETH0. MDO	ETH0. MDIC					CCU41. IN3C			ECAT0. P0_RXD3A
P1.12	ETH0. TX_EN	CAN. N1_TXD		ECAT0. P0_LINK_ACT	SDMMC. DATA6_OUT	SDMMC. DATA6_IN
P1.13	ETH0. TXD0	U0C1. SELO3		ECAT0. PHY_CLK25	SDMMC. DATA7_OUT	SDMMC. DATA7_IN	CAN. N1_RXDC
P1.14	ETH0. TXD1	U0C1. SELO2		ECAT0. SYNC0			U1C0. DX0E
P1.15	SCU. EXTCLK			U1C0. DOUT0						ERU1. 1A0				ECAT0. P0_LINKB
P2.0	CAN. N0_TXD			LEDTS0. COL1	ETH0. MDO	ETH0. MDIB			ERU0. 0B3		CCU40. IN1C
P2.1				LEDTS0. COL0	DB.TDO/TRACESWO		ETH0. CLK_RMIIA			ERU1. 0B0	CCU40. IN0C			ETH0. CLKRXA
P2.2	VADC. EMUX00		CCU41. OUT3	LEDTS0. LINE0	LEDTS0. EXTENDED0	LEDTS0. TSIN0A	ETH0. RXD0A	U0C1. DX0A	ERU0. 1B2		CCU41. IN3A
P2.3	VADC. EMUX01	U0C1. SELO0	CCU41. OUT2	LEDTS0. LINE1	LEDTS0. EXTENDED1	LEDTS0. TSIN1A	ETH0. RXD1A	U0C1. DX2A	ERU0. 1A2		CCU41. IN2A
P2.4	VADC. EMUX02	U0C1. SCLKOUT	CCU41. OUT1	LEDTS0. LINE2	LEDTS0. EXTENDED2	LEDTS0. TSIN2A	ETH0. RXERA	U0C1. DX1A	ERU0. 0B2		CCU41. IN1A
P2.5	ETH0. TX_EN	U0C1. DOUT0	CCU41. OUT0	LEDTS0. LINE3	LEDTS0. EXTENDED3	LEDTS0. TSIN3A	ETH0. RXDVA	U0C1. DX0B	ERU0. 0A2		CCU41. IN0A			ETH0. CRS_DVA
P2.6		ERU1. PDOUT3	CCU80. OUT13	LEDTS0. COL3				CAN. N1_RXDA	ERU0. 1B3		CCU40. IN3C	ECAT0. P0_RX_ERRB
P2.7	ETH0. MDC	CAN. N1_TXD	CCU80. OUT03	LEDTS0. COL2						ERU1. 1B0	CCU40. IN2C
P2.8	ETH0. TXD0	ERU1. PDOUT1	CCU80. OUT32	LEDTS0. LINE4	LEDTS0. EXTENDED4	LEDTS0. TSIN4A	DAC. TRIGGER5				CCU40. IN0B	CCU40. IN1B	CCU40. IN2B	CCU40. IN3B
P2.9	ETH0. TXD1	ERU1. PDOUT2	CCU80. OUT22	LEDTS0. LINE5	LEDTS0. EXTENDED5	LEDTS0. TSIN5A	DAC. TRIGGER4				CCU41. IN0B	CCU41. IN1B	CCU41. IN2B	CCU41. IN3B
P2.10	VADC. EMUX10	ERU1. PDOUT0	ECAT0. PHY_RST	ECAT0. SYNC1
P2.14	VADC. EMUX11	U1C0. DOUT0	CCU80. OUT21					U1C0. DX0D
P2.15	VADC. EMUX12	ECAT0. P1_TXD3	CCU80. OUT11	LEDTS0. LINE6	LEDTS0. EXTENDED6	LEDTS0. TSIN6A	ETH0. COLA	U1C0. DX0C
P3.0		U0C1. SCLKOUT		ECAT0. P1_TX_ENA			U0C1. DX1B				CCU80. IN2C
P3.1		U0C1. SELO0	ECAT0. P1_TXD0				U0C1. DX2B		ERU0. 0B1		CCU80. IN1C
P3.2	USB. DRIVEVBUS	CAN. N0_TXD	ECAT0. P1_TXD1	LEDTS0. COLA					ERU0. 0A1		CCU80. IN0C
P3.3		U1C1. SELO1		ECAT0. MCLK	SDMMC. LED							CCU80. IN3B
P3.4		U1C1. SELO2			SDMMC. BUS_POWER							CCU80. IN0B	ECAT0. P1_LINA
P3.5		U1C1. SELO3		U0C1. DOUT0	SDMMC. CMD_OUT	SDMMC. CMD_IN			ERU0. 3B1				ECAT0. P1_RX_ERRA
P3.6		U1C1. SELO4		U0C1. SCLKOUT	SDMMC. CLK_OUT	SDMMC. CLK_IN			ERU0. 3A1
P4.0		ECAT0. PHY_CLK25		U1C0. SCLKOUT	SDMMC. DATA0_OUT	SDMMC. DATA0_IN	U1C1. DX1C		U0C1. DX0E					ECAT0. P0_RX_ERRA
P4.1		U1C1. MCLKOUT		U0C1. SELO0	SDMMC. DATA3_OUT	SDMMC. DATA3_IN								ECAT0. P0_LINA
P5.0				ERU1. PDOUT0				ETH0. RXD0D	U0C0. DX0D	ECAT0. P0_RXD0B
P5.1	U0C0. DOUT0			ERU1. PDOUT1				ETH0. RXD1D		ECAT0. P0_RXD1B
P5.2		ECAT0. P0_LINK_ACT		ERU1. PDOUT2				ETH0. CRS_DVD		ECAT0. P0_RXD2B				ETH0. RXDVD
P5.7	ECAT0. SYNC0			LEDTS0. COLA						ECAT0. P0_RXD3B
P14.0							VADC. G0CH0
P14.1							VADC. G0CH1
P14.2							VADC. G0CH2	VADC. G1CH2
P14.3							VADC. G0CH3	VADC. G1CH3			CAN. N0_RXDB
P14.4							VADC. G0CH4							ECAT0. LATCH1A
P14.5							VADC. G0CH5							ECAT0. LATCH0A
P14.6							VADC. G0CH6						G0ORC6	ECAT0. P1_RX_CLKB
P14.7							VADC. G0CH7						G0ORC7	ECAT0. P1_RXD0B
P14.8					DAC. OUT_0			VADC. G1CH0			ETH0. RXD0C
P14.9					DAC. OUT_1			VADC. G1CH1			ETH0. RXD1C
P14.12								VADC. G1CH4						ECAT0. P1_RXD1B
P14.13								VADC. G1CH5						ECAT0. P1_RXD2B
P14.14								VADC. G1CH6					G1ORC6	ECAT0. P1_RXD3B
P14.15								VADC. G1CH7					G1ORC7	ECAT0. P1_RX_DVB
P15.2														ECAT0. P1_RX_ERRB
P15.3														ECAT0. P1_LINKB
P15.8											ETH0. CLK_RMIIC			ETH0. CLKRXC
P15.9											ETH0. CRS_DVC			ETH0. RXDVC
HIB_IO_0	HIBOUT	WDT. SERVICE_OUT					AKEUPA
HIB_IO_1	HIBOUT	WDT. SERVICE_OUT					AKEUPB
USB_DP
USB_DM
TCK						DB.TC/SCLK
TMS					DB.TMS/SWDIO
$\bar{P O R S T}$
XTAL1							U0C0. DX0F	U0C1. DX0F	U1C0. DX0F	U1C1. DX0F
XTAL2
RTC_XTAL1									ERU0. 1B1
RTC_XTAL2

Power Connection Scheme

Figure 5

shows a reference power connection scheme for the XMC4300.

Every power supply pin needs to be connected. Different pins of the same supply need also to be externally connected. As example, all V_DDP pins must be connected externally to one V_DDP net. In this reference scheme one 100 nF capacitor is connected at each supply pin against V_SS . An additional 10 µF capacitor is connected to the V_DDP nets and an additional 10 uF capacitor to the V_DDP nets.

The XMC4300 has a common ground concept, all V_SS , V_SSA and V_SSO pins share the same ground potential. In packages with an exposed die pad it must be connected to the common ground as well.

V_AGND is the low potential to the analog reference V_AREF . Depending on the application it can share the common ground or have a different potential. In devices with shared V_DDA / V_AREF and V_SSA / V_AGND pins the reference is tied to the supply. Some analog channels can optionally serve as “Alternate Reference”; further details on this operating mode are described in the Reference Manual.

When V_DDP is supplied, V_BAT must be supplied as well. If no other supply source (e.g. battery) is connected to V_BAT , the V_BAT pin can also be connected directly to V_DDP .

Electrical Parameters

Attention:

All parameters in this chapter are preliminary target values and may change based on characterization results.

General Parameters

Parameter Interpretation

The parameters listed in this section partly represent the characteristics of the XMC4300 and partly its requirements on the system. To aid interpreting the parameters easily when evaluating them for a design, they are marked with a two-letter abbreviation in column “Symbol”:

CC
Such parameters indicate
C
ontroller
C
haracteristics, which are a distinctive feature of the XMC4300 and must be regarded for system design
SR
Such parameters indicate
S
ystem
R
equirements, which must be provided by the application system in which the XMC4300 is designed in

Absolute Maximum Ratings

Stresses above the values listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions may affect device reliability.

Table 12.Absolute Maximum Rating Parameters
Parameter	Symbol	Values			Unit	Note/Test Condition
Parameter	Symbol	Min.	Typ.	Max.	Unit	Note/Test Condition
Storage temperature	T_ST SR	-65	–	150	°C	–
Junction temperature	T_J SR	-40	–	150	°C	–
Voltage at 3.3 V power supply pins with respect to V_SS	V_DDP SR	–	–	4.3	V	–
Voltage on any Class A and dedicated input pin with respect to V_SS	V_IN SR	-1.0	–	V_DDP + 1.0 or max. 4.3	V	whichever is lower
Voltage on any analog input pin with respect to V_AGND	V_AIN V_AREF SR	-1.0	–	V_DDP + 1.0 or max. 4.3	V	whichever is lower
Input current on any pin during overload condition	I_IN SR	-10	–	+10	mA
Absolute maximum sum of all input circuit currents for one port group during overload condition ⁵	Σ I_IN SR	-25	–	+25	mA
Absolute maximum sum of all input circuit currents during overload condition	Σ I_IN SR	-100	–	+100	mA

Figure 6

explains the input voltage ranges of V_IN and V_AIN and its dependency to the supply level of V_DDP . The input voltage must not exceed 4.3 V, and it must not be more than 1.0 V above V_DDP . For the range up to V_DDP + 1.0 V also see the definition of the overload conditions in

Pin Reliability in Overload

Figure 6. Absolute Maximum Input Voltage Ranges

Pin Reliability in Overload

When receiving signals from higher voltage devices, low-voltage devices experience overload currents and voltages that go beyond their own IO power supplies specification.

Table 13

defines overload conditions that will not cause any negative reliability impact if all the following conditions are met:

full operation life-time is not exceeded
Operating Conditions
are met for
- pad supply levels ( V_DDP or V_DDA )
- temperature

If a pin current is outside of the

Operating Conditions

but within the overload conditions, then the parameters of this pin as stated in the Operating Conditions can no longer be guaranteed. Operation is still possible in most cases but with relaxed parameters.

Note:
An overload condition on one or more pins does not require a reset.

Note:
A series resistor at the pin to limit the current to the maximum permitted overload current is sufficient to handle failure situations like short to battery.

Table 13.Overload Parameters
Parameter	Symbol	Values			Unit	Note/Test Condition
Parameter	Symbol	Min.	Typ.	Max.	Unit	Note/Test Condition
Input current on any port pin during overload condition	I_OV SR	-5	–	5	mA
Absolute sum of all input circuit currents for one port group during overload condition ⁶	I_OVG SR	–	–	20	mA	Σ\|I_OVx\|, for all I_OVx < 0 mA
	I_OVG SR	–	–	20	mA	Σ\|I_OVx\|, for all I_OVx > 0 mA
Absolute sum of all input circuit currents during overload condition	I_OVS SR	–	–	80	mA	Σ I_OVG

Figure 7

shows the path of the input currents during overload via the ESD protection structures. The diodes against V_DDP and ground are a simplified representation of these ESD protection structures.

Table 14

and

Table 15

list input voltages that can be reached under overload conditions. Note that the absolute maximum input voltages as defined in the

Absolute Maximum Ratings

must not be exceeded during overload.

Table 14.PN-Junction Characteristics for positive Overload
Pad Type	I_OV = 5 mA, T_J = -40°C	I_OV = 5 mA, T_J = 150°C
A1/A1+	V_IN = V_DDP + 1.0 V	V_IN = V_DDP + 0.75 V
A2	V_IN = V_DDP + 0.7 V	V_IN = V_DDP + 0.6 V
AN/DIG_IN	V_IN = V_DDP + 1.0 V	V_IN = V_DDP + 0.75 V

Table 15.PN-Junction Characteristics for negative Overload
Pad Type	I_OV = 5 mA, T_J = -40°C	I_OV = 5 mA, T_J = 150°C
A1/A1+	V_IN = V_SS - 1.0 V	V_IN = V_SS - 0.75 V
A2	V_IN = V_SS - 0.7 V	V_IN = V_SS - 0.6 V
AN/DIG_IN	V_IN = V_DDP - 1.0 V	V_IN = V_DDP - 0.75 V

Table 16.Port Groups for Overload and Short-Circuit Current Sum Parameters
Group	Pins
1	P0.[12:0], P3.[6:0]
2	P14.[15:0], P15.[9:2]
3	P2.[15:0], P5.[7:0]
4	P1.[15:0], P4.[1:0]

Pad Driver and Pad Classes Summary

This section gives an overview on the different pad driver classes and their basic characteristics.

Table 17.Pad Driver and Pad Classes Overview
Class	Power Supply	Type	Sub-Class	Speed Grade	Load	Termination
A	3.3 V	LVTTL I/O,	A1 (e.g. GPIO)	6 MHz	100 pF	No
			A1+ (e.g. serial I/Os)	25 MHz	50 pF	Series termination recommended
			A2 (e.g. ext. Bus)	80 MHz	15 pF	Series termination recommended

Figure 8

is a qualitative display of the resulting output slope performance with different output driver modes. The detailed input and output characteristics are listed in

Input/Output Pins

Operating Conditions

The following operating conditions must not be exceeded in order to ensure correct operation and reliability of the XMC4300. All parameters specified in the following sections refer to these operating conditions, unless noted otherwise.

Table 18.Operating Conditions Parameters
Parameter	Symbol	Values			Unit	Note/Test Condition
Parameter	Symbol	Min.	Typ.	Max.	Unit	Note/Test Condition
Ambient Temperature	T_A SR	-40	–	85	°C	Temp. Range F
Ambient Temperature	T_A SR	-40	–	125	°C	Temp. Range K
Digital supply voltage	V_DDP SR	3.13	3.3	3.63	V
Core Supply Voltage	V_DDC CC	⁷	1.3	–	V	Generated internally
Digital ground voltage	V_SS SR	0	–	–	V
ADC analog supply voltage	V_DDA SR	3.0	3.3	3.6 ⁸	V
Analog ground voltage for V_DDA	V_SSA SR	-0.1	0	0.1	V
Battery Supply Voltage for Hibernate Domain	V_BAT SR	1.95 ⁹	–	3.63	V	When V_DDP is supplied V_BAT has to be supplied as well.
System Frequency	f_SYS SR	–	–	144	MHz
Short circuit current of digital outputs	I_SC SR	-5	–	5	mA
Absolute sum of short circuit currents per pin group ¹⁰	Σ I_{SC_PG} SR	–	–	20	mA
Absolute sum of short circuit currents of the device	Σ I_{SC_D} SR	–	–	100	mA

DC Parameters

Input/Output Pins

The digital input stage of the shared analog/digital input pins is identical to the input stage of the standard digital input/output pins.

The Pull-up on the $\bar{P O R S T}$ pin is identical to the Pull-up on the standard digital input/output pins.

Note:
These parameters are not subject to production test, but verified by design and/or characterization.

Table 19.Standard Pad Parameters
Parameter	Symbol	Values		Unit	Note/Test Condition
Parameter	Symbol	Min.	Max.	Unit	Note/Test Condition
Pin capacitance (digital inputs/outputs)	C_IO CC	–	10	pF
Pull-down current	\| I_PDL \| SR	150	–	μA	V_IN ≥ 0.6 × V_DDP
Pull-down current	\| I_PDL \| SR	–	10	μA	V_IN ≤ 0.36 × V_DDP
Pull-up current	\| I_PUH \| SR	–	10	μA	¹² V_IN ≥ 0.6 × V_DDP
Pull-up current	\| I_PUH \| SR	100	–	μA	¹¹ V_IN ≤ 0.36 × V_DDP
Input Hysteresis for pads of all A classes ¹³	HYSA CC	0.1 × V_DDP	–	V
$\bar{P O R S T}$ spike filter always blocked pulse duration	t_SF1 CC	–	10	ns
$\bar{P O R S T}$ spike filter pass-through pulse duration	t_SF2 CC	100	–	ns
$\bar{P O R S T}$ pull-down current	\| I_PPD \| CC	13	–	mA	V_IN = 1.0 V

Figure 9

visualizes the input characteristics with an active internal pull device:

in the cases “A” the internal pull device is overridden by a strong external driver;
in the cases “B” the internal pull device defines the input logical state against a weak external load

Table 20.Standard Pads Class_A1
Parameter	Symbol	Values		Unit	Note/Test Condition
Parameter	Symbol	Min.	Max.	Unit	Note/Test Condition
Input leakage current	I_OZA1 CC	-500	500	nA	0 V ≤ V_IN ≤ V_DDP
Input high voltage	V_IHA1 SR	0.6 × V_DDP	V_DDP + 0.3	V	max. 3.6 V
Input low voltage	V_ILA1 SR	-0.3	0.36 × V_DDP	V
Output high voltage, POD = weak	V_OHA1 CC	V_DDP - 0.4	–	V	I_OH ≥ -400 μA
Output high voltage, POD = weak		2.4	–	V	I_OH ≥ -500 μA
Output high voltage, POD ¹⁴ = medium		V_DDP - 0.4	–	V	I_OH ≥ -1.4 mA
Output high voltage, POD ¹⁴ = medium		2.4	–	V	I_OH ≥ -2 mA
Output low voltage	V_OLA1 CC	–	0.4	V	I_OL ≤ 500 μA; POD ¹⁴ = weak
Output low voltage	V_OLA1 CC	–	0.4	V	I_OL ≤ 2 mA; POD ¹⁴ = medium
Fall time	t_FA1 CC	–	150	ns	C_L = 20 pF; POD ¹⁴ = weak
Fall time	t_FA1 CC	–	50	ns	C_L = 50 pF; POD ¹⁴ = medium
Rise time	t_RA1 CC	–	150	ns	C_L = 20 pF; POD ¹⁴ = weak
Rise time	t_RA1 CC	–	50	ns	C_L = 50 pF; POD ¹⁴ = medium

Table 21.Standard Pads Class_A1+
Parameter	Symbol	Values		Unit	Note/Test Condition
Parameter	Symbol	Min.	Max.	Unit	Note/Test Condition
Input leakage current	I_OZA1+ CC	-1	1	µA	0 V ≤ V_IN ≤ V_DDP
Input high voltage	V_IHA1+ SR	0.6 × V_DDP	V_DDP + 0.3	V	max. 3.6 V
Input low voltage	V_ILA1+ SR	-0.3	0.36 × V_DDP	V
Output high voltage, POD = weak	V_OHA1+ CC	V_DDP - 0.4	–	V	I_OH ≥ -400 μA
Output high voltage, POD = weak		2.4	–	V	I_OH ≥ -500 μA
Output high voltage, POD ¹⁵ = medium		V_DDP - 0.4	–	V	I_OH ≥ -1.4 mA
Output high voltage, POD ¹⁵ = medium		2.4	–	V	I_OH ≥ -2 mA
Output high voltage, POD ¹⁵ = strong		V_DDP - 0.4	–	V	I_OH ≥ -1.4 mA
Output high voltage, POD ¹⁵ = strong		2.4	–	V	I_OH ≥ -2 mA
Output low voltage	V_OLA1+ CC	–	0.4	V	I_OL ≤ 500 μA; POD ¹⁵ = weak
		–	0.4	V	I_OL ≤ 2 mA; POD ¹⁵ = medium
		–	0.4	V	I_OL ≤ 2 mA; POD ¹⁵ = strong
Fall time	t_FA1+ CC	–	150	ns	C_L = 20 pF; POD ¹⁵ = weak
		–	50	ns	C_L = 50 pF; POD ¹⁵ = medium
		–	28	ns	C_L = 50 pF; POD ¹⁵ = strong; edge = slow
		–	16	ns	C_L = 50 pF; POD ¹⁵ = strong; edge = soft;
Rise time	t_RA1+ CC	–	150	ns	C_L = 20 pF; POD ¹⁵ = weak
		–	50	ns	C_L = 50 pF; POD ¹⁵ = medium
		–	28	ns	C_L = 50 pF; POD ¹⁵ = strong; edge = slow
		–	16	ns	C_L = 50 pF; POD ¹⁵ = strong; edge = soft

Table 22.Standard Pads Class_A2
Parameter	Symbol	Values		Unit	Note/Test Condition
Parameter	Symbol	Min.	Max.	Unit	Note/Test Condition
Input Leakage current	I_OZA2 CC	-6	6	µA	0 V ≤ V_IN < 0.5V_DDP - 1 V; 0.5V_DDP + 1 V < V_IN ≤ V_DDP
Input Leakage current	I_OZA2 CC	-3	3	µA	0.5V_DDP - 1 V < V_IN < 0.5V_DDP + 1 V
Input high voltage	V_IHA2 SR	0.6 × V_DDP	V_DDP + 0.3	V	max. 3.6 V
Input low voltage	V_ILA2 SR	-0.3	0.36 × V_DDP	V
Output high voltage, POD = weak	V_OHA2 CC	V_DDP - 0.4	–	V	I_OH ≥ -400 μA
Output high voltage, POD = weak		2.4	–	V	I_OH ≥ -500 μA
Output high voltage, POD = medium		V_DDP - 0.4	–	V	I_OH ≥ -1.4 mA
Output high voltage, POD = medium		2.4	–	V	I_OH ≥ -2 mA
Output high voltage, POD = strong		V_DDP - 0.4	–	V	I_OH ≥ -1.4 mA
Output high voltage, POD = strong		2.4	–	V	I_OH ≥ -2 mA
Output low voltage, POD = weak	V_OLA2 CC	–	0.4	V	I_OL ≤ 500 μA
Output low voltage, POD = medium		–	0.4	V	I_OL ≤ 2 mA
Output low voltage, POD = strong		–	0.4	V	I_OL ≤ 2 mA
Fall time	t_FA2 CC	–	150	ns	C_L = 20 pF; POD = weak
		–	50	ns	C_L = 50 pF; POD = medium
		–	3.7	ns	C_L = 50 pF; POD = strong; edge = sharp
		–	7	ns	C_L = 50 pF; POD = strong; edge = medium
		–	16	ns	C_L = 50 pF; POD = strong; edge = soft
Rise time	t_RA2 CC	–	150	ns	C_L = 20 pF; POD = weak
		–	50	ns	C_L = 50 pF; POD = medium
		–	3.7	ns	C_L = 50 pF; POD = strong; edge = sharp
		–	7.0	ns	C_L = 50 pF; POD = strong; edge = medium
		–	16	ns	C_L = 50 pF; POD = strong; edge = soft

Table 23.HIB_IO Class_A1 special Pads
Parameter	Symbol	Values		Unit	Note/Test Condition
Parameter	Symbol	Min.	Max.	Unit	Note/Test Condition
Input leakage current	I_OZHIB CC	-500	500	nA	0 V ≤ V_IN ≤ V_BAT
Input high voltage	V_IHHIB SR	0.6 × V_BAT	V_BAT + 0.3	V	max. 3.6 V
Input low voltage	V_ILHIB SR	-0.3	0.36 × V_BAT	V
Input Hysteresis for HIB_IO pins	HYSHIB CC	0.1 × V_BAT	–	V	V_BAT ≥ 3.13 V
Input Hysteresis for HIB_IO pins	HYSHIB CC	0.06 × V_BAT	–	V	V_BAT < 3.13 V
Output high voltage, POD ¹⁶ = medium	V_OHHIB CC	V_BAT - 0.4	–	V	I_OH ≥ -1.4 mA
Output low voltage	V_OLHIB CC	–	0.4	V	I_OL ≤ 2 mA
Fall time	t_FHIB CC	–	50	ns	V_BAT ≥ 3.13 V C_L = 50 pF
Fall time	t_FHIB CC	–	100	ns	V_BAT < 3.13 V C_L = 50 pF
Rise time	t_RHIB CC	–	50	ns	V_BAT ≥ 3.13 V C_L = 50 pF
Rise time	t_RHIB CC	–	100	ns	V_BAT < 3.13 V C_L = 50 pF

Analog to Digital Converters (VADC)

Note:
These parameters are not subject to production test, but verified by design and/or characterization.

Table 24.VADC Parameters (Operating Conditions apply)
Parameter	Symbol	Values			Unit	Note/Test Condition
Parameter	Symbol	Min.	Typ.	Max.	Unit	Note/Test Condition
Analog reference voltage	V_AREF SR	V_AGND+1	–	V_DDA+0.05¹⁸	V
Analog reference ground ¹⁷	V_AGND SR	V_SSM- 0.05	–	V_AREF- 1	V
Analog reference voltage range ¹⁷ ¹⁹	V_AREF-V_AGND SR	1	–	V_DDA+ 0.1	V
Analog input voltage	V_AIN SR	V_AGND	–	V_DDA	V
Input leakage at analog inputs ²⁰	I_OZ1 CC	-100	–	200	nA	0.03 × V_DDA < V_AIN < 0.97 × V_DDA
		-500	–	100	nA	0 V ≤ V_AIN ≤ 0.03 × V_DDA
		-100	–	500	nA	0.97 × V_DDA ≤ V_AIN ≤ V_DDA
Input leakage current at V_AREF	I_OZ2 CC	-1	–	1	μA	0 V ≤ V_AREF ≤ V_DDA
Input leakage current at V_AGND	I_OZ3 CC	-1	–	1	μA	0 V ≤ V_AGND ≤ V_DDA
Internal ADC clock	f_ADCI CC	2	–	36	MHz	V_DDA = 3.3 V
Switched capacitance at the analog voltage inputs ²¹	C_AINSW CC	–	4	6.5	pF
Total capacitance of an analog input	C_AINTOT CC	–	12	20	pF
Switched capacitance at the positive reference voltage input ¹⁷ ²²	C_AREFSW CC	–	15	30	pF
Total capacitance of the voltage reference inputs ¹⁷	C_AREFTOT CC	–	20	40	pF
Total Unadjusted Error	TUE CC	-4	–	4	LSB	12-bit resolution; V_DDA = 3.3 V; V_AREF = V_DDA²³
Differential Non-Linearity Error	EA_DNL CC	-3	–	3	LSB
Gain Error ²⁴	EA_GAIN CC	-4	–	4	LSB
Integral Non-Linearity ²⁴	EA_INLCC	-3	–	3	LSB
Offset Error ²⁴	EA_OFF CC	-4	–	4	LSB
RMS Noise ²⁵	E_NRMS CC	–	1	2²⁶ ²⁷	LSB
Worst case ADC V_DDA power supply current per active converter	I_DDAA CC	–	1.5	2	mA	during conversion V_DDP = 3.6 V, T_J = 150°C
Charge consumption on V_AREF per conversion ¹⁷	Q_CONV CC	–	30	–	pC	0 V ≤ V_AREF ≤ V_DDA²⁸
ON resistance of the analog input path	R_AIN CC	–	600	1200	Ohm
ON resistance for the ADC test (pull down for AIN7)	R_AIN7T CC	180	550	900	Ohm
Resistance of the reference voltage input path	R_AREF CC	–	700	1700	Ohm

The power-up calibration of the VADC requires a maximum number of 4352 f_ADCI cycles.

Figure 12. VADC Analog Input Leakage Current

Conversion Time

Table 25.Conversion Time (Operating Conditions apply)
Parameter	Symbol	Values	Unit	Note
Conversion time	t_C CC	2 × T_ADC + (2 + N + STC + PC + DM) × T_ADCI	µs	N = 8, 10, 12 for N-bit conversion T_ADC = 1/f_PERIPH T_ADCI = 1/f_ADCI

STC defines additional clock cycles to extend the sample time
PC adds two cycles if post-calibration is enabled
DM adds one cycle for an extended conversion time of the MSB

Conversion Time Examples

System assumptions:

f_ADC = 144 MHz that is t_ADC = 6.9 ns, DIVA = 3, f_ADCI = 36 MHz that is t_ADCI = 27.8 ns

According to the given formulas the following minimum conversion times can be achieved (STC = 0, DM = 0):

12-bit post-calibrated conversion (PC = 2):

t_CN12C = (2 + 12 + 2) × t_ADCI + 2 × t_ADC = 16 × 27.8 ns + 2 × 6.9 ns = 459 ns

12-bit uncalibrated conversion:

t_CN12 = (2 + 12) × t_ADCI + 2 × t_ADC = 14 × 27.8 ns + 2 × 6.9 ns = 403 ns

10-bit uncalibrated conversion:

t_CN10 = (2 + 10) × t_ADCI + 2 × t_ADC = 12 × 27.8 ns + 2 × 6.9 ns = 348 ns

8-bit uncalibrated:

t_CN8 = (2 + 8) × t_ADCI + 2 × t_ADC = 10 × 27.8 ns + 2 × 6.9 ns = 292 ns

Digital to Analog Converters (DAC)

Note:
These parameters are not subject to production test, but verified by design and/or characterization.

Table 26.DAC Parameters (Operating Conditions apply)
Parameter	Symbol	Values			Unit	Note/Test Condition
Parameter	Symbol	Min.	Typ.	Max.	Unit	Note/Test Condition
RMS supply current	I_DD CC	–	2.5	4	mA	per active DAC channel, without load currents of DAC outputs
Resolution	RES CC	–	12	–	Bit
Update rate	f_{URATE_A} CC	–		2	Msample/s	data rate, where DAC can follow 64 LSB code jumps to ± 1LSB accuracy
Update rate	f_{URATE_F} CC	–		5	Msample/s	data rate, where DAC can follow 64 LSB code jumps to ± 4 LSB accuracy
Settling time	t_SETTLE CC	–	1	2	μs	at full scale jump, output voltage reaches target value ± 20 LSB
Slew rate	SR CC	2	5	–	V/μs
Minimum output voltage	V_{OUT_MIN} CC	–	0.3	–	V	code value unsigned: 000; signed: 800
Maximum output voltage	V_{OUT_MAX} CC	–	2.5	–	V	code value unsigned: FFF; signed: 7FF
Integral non-linearity	INL CC	-5.5	±2.5	5.5	LSB	R_L ≥ 5 kOhm, C_L ≤ 50 pF
Differential non-linearity	DNL CC	-2	±1	2	LSB	R_L ≥ 5 kOhm, C_L ≤ 50 pF
Offset error	ED_OFF CC		±20		mV
Gain error	ED_{G_IN} CC	-6.5	-1.5	3	%
Startup time	t_STARTUP CC	–	15	30	µs	time from output enabling till code valid ±16 LSB
3dB Bandwidth of Output Buffer	f_C1 CC	2.5	5	–	MHz	verified by design
Output sourcing current	I_{OUT_SOURCE} CC	–	-30	–	mA
Output sinking current	I_{OUT_SINK} CC	–	0.6	–	mA
Output resistance	R_OUT CC	–	50	–	Ohm
Load resistance	R_L SR	5	–	–	kOhm
Load capacitance	C_L SR	–	–	50	pF
Signal-to-Noise Ratio	SNR CC	–	70	–	dB	examination bandwidth < 25 kHz
Total Harmonic Distortion	THD CC	–	70	–	dB	examination bandwidth < 25 kHz
Power Supply Rejection Ratio	PSRR CC	–	56	–	dB	to V_DDA verified by design

Conversion Calculation

Unsigned:

DACxDATA = 4095 × (V_OUT /-V_{OUT_MIN}) / (V_{OUT_MAX} /-V_{OUT_MIN})

Signed:

DACxDATA = 4095 × (V_OUT /-V_{OUT_MIN}) / (V_{OUT_MAX} /-V_{OUT_MIN}) - 2048

Out-of-Range Comparator (ORC)

The Out-of-Range Comparator (ORC) triggers on analog input voltages (V_AIN) above the analog reference

²⁹

(V_AREF) on selected input pins (GxORCy) and generates a service request trigger (GxORCOUTy).

Note:
These parameters are not subject to production test, but verified by design and/or characterization.

The parameters in

Table 27

apply for the maximum reference voltage V_AREF = V_DDA /+ 50 mV.

Table 27.ORC Parameters (Operating Conditions apply)
Parameter	Symbol	Values			Unit	Note/Test Condition
Parameter	Symbol	Min.	Typ.	Max.	Unit	Note/Test Condition
DC Switching Level	V_ODC CC	100	125	210	mV	V_AIN ≥ V_AREF + V_ODC
Hysteresis	V_OHYS CC	50	–	V_ODC	mV
Detection Delay of a persistent Overvoltage	t_ODD CC	50	–	450	ns	V_AIN ≥ V_AREF + 210 mV
Detection Delay of a persistent Overvoltage	t_ODD CC	45	–	105	ns	V_AIN ≥ V_AREF + 400 mV
Always detected Overvoltage Pulse	t_OPDD CC	440	–	–	ns	V_AIN ≥ V_AREF + 210 mV
Always detected Overvoltage Pulse	t_OPDD CC	90	–	–	ns	V_AIN ≥ V_AREF + 400 mV
Never detected Overvoltage Pulse	t_OPDN CC	–	–	45	ns	V_AIN ≥ V_AREF + 210 mV
Never detected Overvoltage Pulse	t_OPDN CC	–	–	30	ns	V_AIN ≥ V_AREF + 400 mV
Release Delay	t_ORD CC	65	–	105	ns	V_AIN ≤ V_AREF
Enable Delay	t_OED CC	–	100	200	ns

Die Temperature Sensor

The Die Temperature Sensor (DTS) measures the junction temperature T_J .

Note:
These parameters are not subject to production test, but verified by design and/or characterization.

Table 28.Die Temperature Sensor Parameters
Parameter	Symbol	Values			Unit	Note/Test Condition
Parameter	Symbol	Min.	Typ.	Max.	Unit	Note/Test Condition
Temperature sensor range	T_SR SR	-40	–	150	°C
Linearity Error (to the below defined formula)	ΔT_LE CC	–	±1	–	°C	per ΔT_J ≤ 30°C
Offset Error	ΔT_OE CC	–	±6	–	°C	ΔT_OE = T_J - T_DTS V_DDP ≤ 3.3 V³⁰
Measurement time	t_M CC	–	–	100	µs
Start-up time after reset inactive	t_TSST SR	–	–	10	µs

The following formula calculates the temperature measured by the DTS in [°C] from the RESULT bit field of the DTSSTAT register.

Temperature T_DTS = (RESULT - 605)/2.05 [°C]

This formula and the values defined in

Table 28

apply with the following calibration values:

DTSCON.BGTRIM = 8
DTSCON.REFTRIM = 4

USB OTG Interface DC Characteristics

The Universal Serial Bus (USB) Interface is compliant to the USB Rev. 2.0 Specification and the OTG Specification Rev. 1.3. High-Speed Mode is not supported.

Note:
These parameters are not subject to production test, but verified by design and/or characterization.

Table 29.USB OTG VBUS and ID Parameters (Operating Conditions apply)
Parameter	Symbol	Values			Unit	Note/Test Condition
Parameter	Symbol	Min.	Typ.	Max.	Unit	Note/Test Condition
VBUS input voltage range	V_IN CC	0.0	–	5.25	V
A-device VBUS valid threshold	V_B1 CC	4.4	–	–	V
A-device session valid threshold	V_B2 CC	0.8	–	2.0	V
B-device session valid threshold	V_B3 CC	0.8	–	4.0	V
B-device session end threshold	V_B4 CC	0.2	–	0.8	V
VBUS input resistance to ground	R_{VBUS_IN} CC	40	–	100	kOhm
B-device VBUS pull-up resistor	R_{VBUS_PU} CC	281	–	–	Ohm	Pull-up voltage = 3.0 V
B-device VBUS pull-down resistor	R_{VBUS_PD} CC	656	–	–	Ohm
USB.ID pull-up resistor	R_{UID_PU} CC	14	–	25	kOhm
VBUS input current	I_{VBUS_IN} CC	–	–	150	µA	0 V ≤ V_IN ≤ 5.25 V: T_AVG = 1 ms

Table 30.USB OTG Data Line (USB_DP, USB_DM) Parameters (Operating Conditions apply)
Parameter	Symbol	Values			Unit	Note/Test Condition
Parameter	Symbol	Min.	Typ.	Max.	Unit	Note/Test Condition
Input low voltage	V_IL SR	–	–	0.8	V
Input high voltage (driven)	V_IH SR	2.0	–	–	V
Input high voltage (floating) ³¹	V_IHZ SR	2.7	–	3.6	V
Differential input sensitivity	V_DIS CC	0.2	–	–	V
Differential common mode range	V_CM CC	0.8	–	2.5	V
Output low voltage	V_OL CC	0.0	–	0.3	V	1.5 kOhm pull-up to 3.6 V
Output high voltage	V_OH CC	2.8	–	3.6	V	15 kOhm pull-down to 0 V
DP pull-up resistor (idle bus)	R_PUI CC	900	–	1575	Ohm
DP pull-up resistor (upstream port receiving)	R_PUA CC	1425	–	3090	Ohm
DP, DM pull-down resistor	R_PD CC	14.25	–	24.8	kOhm
Input impedance DP, DM	Z_INP CC	300	–	–	kOhm	0 V ≤ V_IN ≤ V_DDP
Driver output resistance DP, DM	Z_DRV CC	28	–	44	Ohm

Oscillator Pins

Note:
It is strongly recommended to measure the oscillation allowance (negative resistance) in the final target system (layout) to determine the optimal parameters for the oscillator operation. Please refer to the limits specified by the crystal or ceramic resonator supplier.

Note:
These parameters are not subject to production test, but verified by design and/or characterization.

The oscillator pins can be operated with an external crystal (see

Figure 16

) or in direct input mode (see

Figure 17

Table 31.OSC_XTAL Parameters
Parameter	Symbol	Values			Unit	Note/Test Condition
Parameter	Symbol	Min.	Typ.	Max.	Unit	Note/Test Condition
Input frequency	f_OSC SR	4	–	40	MHz	Direct Input Mode selected
Input frequency	f_OSC SR	4	–	25	MHz	External Crystal Mode selected
Oscillator start-up time ³²	t_OSCS CC	–	–	10	ms
Input voltage at XTAL1	V_IX SR	-0.5	–	V_DDP + 0.5	V
Input amplitude (peak-to-peak) at XTAL1 ³³ ³⁴	V_PPX SR	0.4 × V_DDP	–	V_DDP + 1.0	V
Input high voltage at XTAL1	V_IHBX SR	1.0	–	V_DDP + 0.5	V
Input low voltage at XTAL1 ³⁵	V_ILBX SR	-0.5	–	0.4	V
Input leakage current at XTAL1	I_ILX1 CC	-100	–	100	nA	Oscillator power down 0 V ≤ V_IX ≤ V_DDP

Table 32.RTC_XTAL Parameters
Parameter	Symbol	Values			Unit	Note/Test Condition
Parameter	Symbol	Min.	Typ.	Max.	Unit	Note/Test Condition
Input frequency	f_OSC SR	–	32.768	–	kHz
Oscillator start-up time ³⁶	t_OSCS CC	–	–	5	s
Input voltage at RTC_XTAL1	V_IX SR	-0.3	–	V_BAT + 0.3	V
Input amplitude (peak-to-peak) at RTC_XTAL1 ³⁷ ³⁹	V_PPX SR	0.4	–	–	V
Input high voltage at RTC_XTAL1	V_IHBX SR	0.6 × V_BAT	–	V_BAT + 0.3	V
Input low voltage at RTC_XTAL1 ⁴⁰	V_ILBX SR	-0.3	–	0.36 × V_BAT	V
Input Hysteresis for RTC_XTAL1 ⁴⁰ ⁴¹	V_HYSX CC	0.1 × V_BAT		–	V	3.0 V ≤ V_BAT < 3.6 V
Input Hysteresis for RTC_XTAL1 ⁴⁰ ⁴¹	V_HYSX CC	0.03 × V_BAT		–	V	V_BAT < 3.0 V
Input leakage current at RTC_XTAL1	I_ILX1 CC	-100	–	100	nA	Oscillator power down 0 V ≤ V_IX ≤ V_BAT

Power Supply Current

The total power supply current defined below consists of a leakage and a switching component.

Application relevant values are typically lower than those given in the following tables, and depend on the customer's system operating conditions (e.g. thermal connection or used application configurations).

Note:
These parameters are not subject to production test, but verified by design and/or characterization.

If not stated otherwise, the operating conditions for the parameters in the following table are:

V_DDP = 3.3 V, T_A = 25°C

Table 33.Power Supply Parameters
Parameter	Symbol	Values			Unit	Note/Test Condition
Parameter	Symbol	Min.	Typ.	Max.	Unit	Note/Test Condition
Active supply current ⁴² Peripherals enabled Frequency: f_CPU/f_PERIPH/f_CCU in MHz	I_DDPA CC	–	135	–	mA	144/144/144
		–	125	–		144/72/72
		–	97	–		72/72/144
		–	80	–		24/24/24
		–	68	–		1/1/1
Active supply current Code execution from RAM Flash in Sleep mode	I_DDPA CC	–	108	–	mA	144/144/144
	I_DDPA CC	–	98	–	mA	144/72/72
Active supply current ⁴⁴ Peripherals disabled Frequency: f_CPU/f_PERIPH/f_CCU in MHz	I_DDPA CC	–	86	–	mA	144/144/144
		–	85	–		144/72/72
		–	70	–		72/72/144
		–	55	–		24/24/24
		–	50	–		1/1/1
Sleep supply current ⁴⁵ Peripherals enabled Frequency: f_CPU / f_PERIPH / f_CCU in MHz	I_DDPS CC	–	127	–	mA	144/144/144
		–	115	–		144/72/72
		–	93	–		72/72/144
		–	57	–		24/24/24
		–	47	–		1/1/1
f_CPU/f_PERIPH/f_CCU in kHz		–	48	–		100/100/100
Sleep supply current ⁴⁶ Peripherals disabled Frequency: f_CPU/f_PERIPH/f_CCU in MHz	I_DDPS CC	–	77	–	mA	144/144/144
		–	76	–		144/72/72
		–	65	–		72/72/144
		–	53	–		24/24/24
		–	46	–		1/1/1
f_CPU/f_PERIPH/f_CCU in kHz		–	47	–		100/100/100
Deep Sleep supply current ⁴⁷ Flash in Sleep mode Frequency: f_CPU/f_PERIPH/f_CCU in MHz	I_DDPD CC	–	11	–	mA	24/24/24
		–	7.0	–		4/4/4
		–	6.6	–		1/1/1
f_CPU/f_PERIPH/f_CCU in kHz		–	7.6	–		100/100/100 ⁴⁸
Hibernate supply current RTC on ⁴⁹	I_DDPH CC	–	8.7	–	µA	V_BAT = 3.3 V
		–	6.5	–		V_BAT = 2.4 V
		–	5.7	–		V_BAT = 2.0 V
Hibernate supply current RTC off ⁵⁰	I_DDPH CC	–	8.0	–	µA	V_BAT = 3.3 V
		–	6.0	–		V_BAT = 2.4 V
		–	5.0	–		V_BAT = 2.0 V
Hibernate off ⁵¹	I_DDPH CC	–	4.4	–	µA	V_BAT = 3.3 V
		–	3.5	–		V_BAT = 2.4 V
		–	3.1	–		V_BAT = 2.0 V
Worst case active supply current ⁵²	I_DDPA CC	–	–	250 ⁴³	mA	V_DDP = 3.6 V, T_J = 150°C
V_DDA power supply current	I_DDA CC	–	–	⁵³	mA
I_DDP current at $\bar{P O R S T}$ Low	I_{DDP_PORST} CC	–	5	10	mA	V_DDP = 3.3 V, T_J = 25°C
I_DDP current at $\bar{P O R S T}$ Low	I_{DDP_PORST} CC	–	13	55	mA	V_DDP = 3.6 V, T_J = 150°C
Power Dissipation	P_DISS CC	–	–	1.4	W	V_DDP = 3.6 V, T_J = 150°C
Wake-up time from Sleep to Active mode	t_SSA CC	–	6	–	cycles
Wake-up time from Deep Sleep to Active mode		–	–	–	ms	Defined by the wake-up of the Flash module, see “ Flash Memory Parameters ”
Wake-up time from Hibernate mode		–	–	–	ms	Wake-up via power-on reset event, see “Power-Up and Supply Monitoring”

Peripheral Idle Currents

Default test conditions:

f_sys and derived clocks at 144 MHz
V_DDP = 3.3 V, T_a = 25°C
all peripherals are held in reset (see the PRSTAT registers in the Reset Control Unit of the SCU)
the peripheral clocks are disabled (see CGATSTAT registers in the Clock Control Unit of the SCU
no I/O activity

The given values are a result of differential measurements with asserted and deasserted peripheral reset as well as disabled and enabled clock of the peripheral under test.

The tested peripheral is left in the state after the peripheral reset is deasserted, no further initialisation or configuration is done. For example no timer is running in the CCUs, no communication active in the USICs, etc.

Table 34.Peripheral Idle Currents
Parameter	Symbol	Values			Unit	Note/Test Condition
Parameter	Symbol	Min.	Typ.	Max.	Unit	Note/Test Condition
PORTS FCE WDT	I_PER CC	–	≤0.3	–	mA
MultiCAN ERU LEDTSCU0 ETH CCU4x, CCU8x ⁵⁴		–	≤1.0	–
DAC (digital)		–	1.3	–
USICx SDMMC		–	3.0	–
VADC (digital) ⁵⁵		–	4.5	–
DMA0, USB, EtherCAT		–	6.0	–

Flash Memory Parameters

Note:
These parameters are not subject to production test, but verified by design and/or characterization.

Table 35.Flash Memory Parameters
Parameter	Symbol	Values			Unit	Note/Test Condition
Parameter	Symbol	Min.	Typ.	Max.	Unit	Note/Test Condition
Erase Time per 256 Kbyte Sector	t_ERP CC	–	5	5.5	s
Erase Time per 64 Kbyte Sector	t_ERP CC	–	1.2	1.4	s
Erase Time per 16 Kbyte Logical Sector	t_ERP CC	–	0.3	0.4	s
Program time per page ⁵⁶	t_PRP CC	–	5.5	11	ms
Erase suspend delay	t_{FL_ErSusp} CC	–	–	15	ms
Wait time after margin change	t_{FL_MarginDel} CC	10	–	–	µs
Wake-up time	t_WU CC	–	–	270	µs
Read access time	t_a CC	22	–	–	ns	For operation with 1/f_CPU < t_a wait states must be configured ⁵⁷
Data Retention Time, Physical Sector	t_RET CC	20	–	–	years	Max. 1000 erase/program cycles
Data Retention Time, Logical Sector ⁵⁸ ⁵⁹	t_RETL CC	20	–	–	years	Max. 100 erase/program cycles
Data Retention Time, User Configuration Block (UCB) ⁵⁸ ⁵⁹	t_RTU CC	20	–	–	years	Max. 4 erase/program cycles per UCB
Endurance on 64 Kbyte Physical Sector PS4	N_EPS4 CC	10000	–	–	cycles	Cycling distributed over life time ⁶⁰

AC Parameters

Testing Waveforms

Figure 19. Testing Waveform, Output Delay

Figure 20. Testing Waveform, Output High Impedance

Power-Up and Supply Monitoring

$\bar{P O R S T}$ is always asserted when V_DDP and/or V_DDC violate the respective thresholds.

Note:

These parameters are not subject to production test, but verified by design and/or characterization.

Table 36.Supply Monitoring Parameters
Parameter	Symbol	Values			Unit	Note/Test Condition
Parameter	Symbol	Min.	Typ.	Max.	Unit	Note/Test Condition
Digital supply voltage reset threshold	V_POR CC	2.79 ⁶¹	–	3.05 ⁶²	V	⁶³
Core supply voltage reset threshold	V_PV CC	–	–	1.17	V
V_DDP voltage to ensure defined pad states	V_DDPPA CC	–	1.0	–	V
$\bar{P O R S T}$ rise time	t_PR SR	–	–	2	μs	⁶⁴
Startup time from power-on reset with code execution from Flash	t_SSW CC	–	2.5	3.5	ms	Time to the first user code instruction
V_DDC ramp up time	t_VCR CC	–	550	–	μs	Ramp up after power-on or after a reset triggered by a violation of V_POR or V_PV

Power Sequencing

While starting up and shutting down as well as when switching power modes of the system it is important to limit the current load steps. A typical cause for such load steps is changing the CPU frequency f_CPU . Load steps exceeding the below defined values may cause a power on reset triggered by the supply monitor.

Note:

These parameters are not subject to production test, but verified by design and/or characterization.

Table 37.Power Sequencing Parameters
Parameter	Symbol	Values			Unit	Note/Test Condition
Parameter	Symbol	Min.	Typ.	Max.	Unit	Note/Test Condition
Positive Load Step Current	ΔI_PLS SR	–	–	50	mA	Load increase on V_DDP Δ t ≤ 10 ns
Negative Load Step Current	ΔI_NLS SR	–	–	150	mA	Load decrease on V_DDP Δ t ≤ 10 ns
V_DDC Voltage Over-/Undershoot from Load Step	ΔV_LS CC	–	–	±100	mV	For maximum positive or negative load step
Positive Load Step Settling Time	t_PLSS SR	50	–	–	μs
Negative Load Step Settling Time	t_NLSS SR	100	–	–	μs
External Buffer Capacitor on V_DDC	C_EXT SR	–	10	–	μF	In addition C = 100 nF capacitor on each V_DDC pin

Positive Load Step Examples

System assumptions:

f_CPU = f_SYS, target frequency f_CPU = 144 MHz, main PLL f_VCO = 288 MHz, stepping done by K2 divider, t_PLSS between individual steps:

24 MHz - 48 MHz - 72 MHz - 96 MHz - 144 MHz (K2 steps 12 - 6 - 4 - 3 - 2)

24 MHz - 48 MHz - 96 MHz - 144 MHz (K2 steps 12 - 6 - 3 - 2)

24 MHz - 72 MHz - 144 MHz (K2 steps 12 - 4 - 2)

Phase Locked Loop (PLL) Characteristics

Note:

These parameters are not subject to production test, but verified by design and/or characterization.

Main and USB PLL

Table 38.PLL Parameters
Parameter	Symbol	Values			Unit	Note/Test Condition
Parameter	Symbol	Min.	Typ.	Max.	Unit	Note/Test Condition
Accumulated Jitter	D_P CC	–	–	±5	ns	accumulated over 300 cycles f_SYS = 144 MHz
Duty Cycle ⁶⁵	D_DC CC	46	50	54	%	Low pulse to total period, assuming an ideal input clock source
PLL base frequency	f_PLLBASE CC	30	–	140	MHz
VCO input frequency	f_REF CC	4	–	16	MHz
VCO frequency range	f_VCO CC	260	–	520	MHz
PLL lock-in time	t_L CC	–	–	400	μs

Internal Clock Source Characteristics

Note:

These parameters are not subject to production test, but verified by design and/or characterization.

Fast Internal Clock Source

Table 39.Fast Internal Clock Parameters
Parameter	Symbol	Values			Unit	Note/Test Condition
Parameter	Symbol	Min.	Typ.	Max.	Unit	Note/Test Condition
Nominal frequency	f_OFINC CC	–	36.5	–	MHz	not calibrated
Nominal frequency	f_OFINC CC	–	24	–	MHz	calibrated
Accuracy	Δf_OFI CC	-0.5	–	0.5	%	automatic calibration ⁶⁶ ⁶⁷
		-15	–	15	%	factory calibration, V_DDP = 3.3 V
		-25	–	25	%	no calibration, V_DDP = 3.3 V
		-7	–	7	%	Variation over voltage range ⁶⁸ 3.13 V ≤ V_DDP ≤ 3.63 V
Start-up time	t_OFIS CC	–	50	–	μs

Slow Internal Clock Source

Table 40.Slow Internal Clock Parameters
Parameter	Symbol	Values			Unit	Note/Test Condition
Parameter	Symbol	Min.	Typ.	Max.	Unit	Note/Test Condition
Nominal frequency	f_OSI CC	–	32.768	–	kHz
Accuracy	Δf_OSI CC	-4	–	4	%	V_BAT = const. 0°C ≤ T_A ≤ 85°C
		-5	–	5	%	V_BAT = const. T_A < 0°C or T_A > 85°C
		-5	–	5	%	2.4 V ≤ V_BAT , T_A = 25°C
		-10	–	10	%	1.95 V ≤ V_BAT < 2.4 V, T_A = 25°C
Start-up time	t_OSIS CC	–	50	–	μs

JTAG Interface Timing

The following parameters are applicable for communication through the JTAG debug interface. The JTAG module is fully compliant with IEEE1149.1-2000.

Note:

These parameters are not subject to production test, but verified by design and/or characterization.

Note:

Operating conditions apply.

Table 41.JTAG Interface Timing Parameters
Parameter	Symbol	Values			Unit	Note/Test Condition
Parameter	Symbol	Min.	Typ.	Max.	Unit	Note/Test Condition
TCK clock period	t₁ SR	25	–	–	ns
TCK high time	t₂ SR	10	–	–	ns
TCK low time	t₃ SR	10	–	–	ns
TCK clock rise time	t₄ SR	–	–	4	ns
TCK clock fall time	t₅ SR	–	–	4	ns
TDI/TMS setup to TCK rising edge	t₆ SR	6	–	–	ns
TDI/TMS hold after TCK rising edge	t₇ SR	6	–	–	ns
TDO valid after TCK falling edge (propagation delay)	t₈ CC	–	–	13	ns	C_L = 50 pF
TDO valid after TCK falling edge (propagation delay)	t₈ CC	3	–	–	ns	C_L = 20 pF
TDO hold after TCK falling edge ⁶⁹	t₁₈ CC	2	–	–	ns
TDO high imped. to valid from TCK falling edge ⁶⁹ ⁷⁰	t₉ CC	–	–	14	ns	C_L = 50 pF
TDO valid to high imped. from TCK falling edge ⁶⁹	t₁₀ CC	–	–	13.5	ns	C_L = 50 pF

Serial Wire Debug Port (SW-DP) Timing

The following parameters are applicable for communication through the SW-DP interface.

Note:

These parameters are not subject to production test, but verified by design and/or characterization.

Note:

Operating conditions apply.

Table 42.SWD Interface Timing Parameters (Operating Conditions apply)
Parameter	Symbol	Values			Unit	Note/Test Condition
Parameter	Symbol	Min.	Typ.	Max.	Unit	Note/Test Condition
SWDCLK clock period	t_SC SR	25	–	–	ns	C_L = 30 pF
SWDCLK clock period	t_SC SR	40	–	–	ns	C_L = 50 pF
SWDCLK high time	t₁ SR	10	–	500000	ns
SWDCLK low time	t₂ SR	10	–	500000	ns
SWDIO input setup to SWDCLK rising edge	t₃ SR	6	–	–	ns
SWDIO input hold after SWDCLK rising edge	t₄ SR	6	–	–	ns
SWDIO output valid time after SWDCLK rising edge	t₅ CC	–	–	17	ns	C_L = 50 pF
SWDIO output valid time after SWDCLK rising edge	t₅ CC	–	–	13	ns	C_L = 30 pF
SWDIO output hold time from SWDCLK rising edge	t₆ CC	3	–	–	ns

Peripheral Timing

Synchronous Serial Interface (USIC SSC) Timing

The following parameters are applicable for a USIC channel operated in SSC mode.

Note:

These parameters are not subject to production test, but verified by design and/or characterization.

Table 43.USIC SSC Master Mode Timing
Parameter	Symbol	Values			Unit	Note/Test Condition
Parameter	Symbol	Min.	Typ.	Max.	Unit	Note/Test Condition
SCLKOUT master clock period	t_CLK CC	33.3	–	–	ns
Slave select output SELO active to first SCLKOUT transmit edge	t₁ CC	t_PB - 6.5	–	–	ns
Slave select output SELO inactive after last SCLKOUT receive edge	t₂ CC	t_PB - 8.5 ⁷¹	–	–	ns
Data output DOUT[3:0] valid time	t₃ CC	-6	–	8	ns
Receive data input DX0/DX[5:3] setup time to SCLKOUT receive edge	t₄ SR	23	–	–	ns
Data input DX0/DX[5:3] hold time from SCLKOUT receive edge	t₅ SR	1	–	–	ns

Table 44.USIC SSC Slave Mode Timing
Parameter	Symbol	Values			Unit	Note/Test Condition
Parameter	Symbol	Min.	Typ.	Max.	Unit	Note/Test Condition
DX1 slave clock period	t_CLK SR	66.6	–	–	ns
Select input DX2 setup to first clock input DX1 transmit edge	t₁₀ SR	3	–	–	ns
Select input DX2 hold after last clock input DX1 receive edge ⁷²	t₁₁ SR	4	–	–	ns
Receive data input DX0/DX[5:3] setup time to shift clock receive edge ⁷²	t₁₂ SR	6	–	–	ns
Data input DX0/DX[5:3] hold time from clock input DX1 receive edge ⁷²	t₁₃ SR	4	–	–	ns
Data output DOUT[3:0] valid time	t₁₄ CC	0	–	24	ns

Figure 26. USIC - SSC Master/Slave Mode Timing

Note:

This timing diagram shows a standard configuration, for which the slave select signal is low-active, and the serial clock signal is not shifted and not inverted.

Inter-IC (IIC) Interface Timing

The following parameters are applicable for a USIC channel operated in IIC mode.

Note:

These parameters are not subject to production test, but verified by design and/or characterization.

Table 45.USIC IIC Standard Mode Timing ⁷³
Parameter	Symbol	Values			Unit	Note/Test Condition
Parameter	Symbol	Min.	Typ.	Max.	Unit	Note/Test Condition
Fall time of both SDA and SCL	t₁ CC/SR	–	–	300	ns
Rise time of both SDA and SCL	t₂ CC/SR	–	–	1000	ns
Data hold time	t₃ CC/SR	0	–	–	µs
Data set-up time	t₄ CC/SR	250	–	–	ns
LOW period of SCL clock	t₅ CC/SR	4.7	–	–	µs
HIGH period of SCL clock	t₆ CC/SR	4.0	–	–	µs
Hold time for (repeated) START condition	t₇ CC/SR	4.0	–	–	µs
Set-up time for repeated START condition	t₈ CC/SR	4.7	–	–	µs
Set-up time for STOP condition	t₉ CC/SR	4.0	–	–	µs
Bus free time between a STOP and START condition	t₁₀ CC/SR	4.7	–	–	µs
Capacitive load for each bus line	C_b SR	–	–	400	pF

Table 46.USIC IIC Fast Mode Timing ⁷⁴
Parameter	Symbol	Values			Unit	Note/Test Condition
Parameter	Symbol	Min.	Typ.	Max.	Unit	Note/Test Condition
Fall time of both SDA and SCL	t₁ CC/SR	20 + 0.1*C_b	–	300	ns
Rise time of both SDA and SCL	t₂ CC/SR	20 + 0.1* C_b ⁷⁵	–	300	ns
Data hold time	t₃ CC/SR	0	–	–	µs
Data set-up time	t₄ CC/SR	100	–	–	ns
LOW period of SCL clock	t₅ CC/SR	1.3	–	–	µs
HIGH period of SCL clock	t₆ CC/SR	0.6	–	–	µs
Hold time for (repeated) START condition	t₇ CC/SR	0.6	–	–	µs
Set-up time for repeated START condition	t₈ CC/SR	0.6	–	–	µs
Set-up time for STOP condition	t₉ CC/SR	0.6	–	–	µs
Bus free time between a STOP and START condition	t₁₀ CC/SR	1.3	–	–	µs
Capacitive load for each bus line	C_b SR	–	–	400	pF

Figure 27. USIC IIC Stand and Fast Mode Timing

Inter-IC Sound (IIS) Interface Timing

The following parameters are applicable for a USIC channel operated in IIS mode.

Note:

These parameters are not subject to production test, but verified by design and/or characterization.

Table 47.USIC IIS Master Transmitter Timing
Parameter	Symbol	Values			Unit	Note/Test Condition
Parameter	Symbol	Min.	Typ.	Max.	Unit	Note/Test Condition
Clock period	t₁ CC	33.3	–	–	ns
Clock high time	t₂ CC	0.35 xt_1min	–	–	ns
Clock low time	t₃ CC	0.35 xt_1min	–	–	ns
Hold time	t₄ CC	0	–	–	ns
Clock rise time	t₅ CC	–	–	0.15 xt_1min	ns

Figure 28. USIC IIS Master Transmitter Timing

Table 48.USIC IIS Slave Receiver Timing
Parameter	Symbol	Values			Unit	Note/Test Condition
Parameter	Symbol	Min.	Typ.	Max.	Unit	Note/Test Condition
Clock period	t₆ SR	66.6	–	–	ns
Clock high time	t₇ SR	0.35 xt_6min	–	–	ns
Clock low time	t₈ SR	0.35 xt_6min	–	–	ns
Set-up time	t₉ SR	0.2 xt_6min	–	–	ns
Hold time	t₁₀ SR	0	–	–	ns

Figure 29. USIC IIS Slave Receiver Timing

SDMMC Interface Timing

Note:

These parameters are not subject to production test, but verified by design and/or characterization.

Note:

Operating Conditions apply, total external capacitive load C_L = 40 pF.

AC Timing Specifications (Full-Speed Mode)

Table 49.SDMMC Timing for Full-Speed Mode
Parameter	Symbol	Values		Unit	Note/Test Condition
Parameter	Symbol	Min.	Max.	Unit	Note/Test Condition
Clock frequency in full speed transfer mode (1/t_pp )	f_pp CC	0	24	MHz
Clock cycle in full speed transfer mode	t_pp CC	40	–	ns
Clock low time	t_WL CC	10	–	ns
Clock high time	t_WH CC	10	–	ns
Clock rise time	t_TLH CC	–	10	ns
Clock fall time	t_THL CC	–	10	ns
Inputs setup to clock rising edge	t_{ISU_F} SR	2	–	ns
Inputs hold after clock rising edge	t_{IH_F} SR	2	–	ns
Outputs valid time in full speed mode	t_{ODLY_F} CC	–	10	ns
Outputs hold time in full speed mode	t_{OH_F} CC	0	–	ns

Table 50.SD Card Bus Timing for Full-Speed Mode ⁷⁶
Parameter	Symbol	Values		Unit	Note/Test Condition
Parameter	Symbol	Min.	Max.	Unit	Note/Test Condition
SD card input setup time	t_ISU	5	–	ns
SD card input hold time	t_IH	5	–	ns
SD card output valid time	t_ODLY	–	14	ns
SD card output hold time	t_OH	0	–	ns

Full-Speed Output Path (Write)

Full-Speed Write Meeting Setup (Maximum Delay)

The following equations show how to calculate the allowed skew range between the SD_CLK and SD_DAT/CMD signals on the PCB.

No clock delay:

t_{O D L Y_F} + t_{D A T A_D E L A Y} + t_{T A P_D E L A Y} + t_{I S U} < t_{W L}

With clock delay:

t_{O D L Y_F} + t_{D A T A_D E L A Y} + t_{T A P_D E L A Y} + t_{I S U} < t_{W L} + t_{C L K_D E L A Y}

t_{D A T A_D E L A Y} + t_{T A P_D E L A Y} + t_{W L} < t_{P P} + t_{C L K_D E L A Y} - t_{I S U} - t_{O D L Y_F} t_{D A T A_D E L A Y} + t_{T A P_D E L A Y} + 20 < 40 + t_{C L K_D E L A Y} - 5 - 10 t_{D A T A_D E L A Y} < 5 + t_{C L K_D E L A Y} - t_{T A P_D E L A Y}

The data can be delayed versus clock up to 5 ns in ideal case of t_WL = 20 ns.

Full-Speed Write Meeting Hold (Minimum Delay)

The following equations show how to calculate the allowed skew range between the SD_CLK and SD_DAT/CMD signals on the PCB.

t_{C L K_D E L A Y} < t_{W L} + t_{O H_F} + t_{D A T A_D E L A Y} + t_{T A P_D E L A Y} - t_{I H} t_{C L K_D E L A Y} < 20 + t_{D A T A_D E L A Y} + t_{T A P_D E L A Y} - 5 t_{D A T A_D E L A Y} < 15 + t_{C L K_D E L A Y} + t_{T A P_D E L A Y}

The clock can be delayed versus data up to 18.2 ns (external delay line) in ideal case of t_WL = 20 ns, with maximum t_{TAP_DELAY} = 3.2 ns programmed.

Full-Speed Input Path (Read)

Full-Speed Read Meeting Setup (Maximum Delay)

The following equations show how to calculate the allowed combined propagation delay range of the SD_CLK and SD_DAT/CMD signals on the PCB.

t_{C L K_D E L A Y} + t_{D A T A_D E L A Y} + t_{T A P_D E L A Y} + t_{O D L Y} + t_{I S U_F} < 0.5 \times t_{p p} t_{C L K_D E L A Y} + t_{D A T A_D E L A Y} < 0.5 \times t_{p p} - t_{O D L Y} - t_{I S U_F} - t_{T A P_D E L A Y} t_{C L K_D E L A Y} + t_{D A T A_D E L A Y} < 20 - 14 - 2 - t_{T A P_D E L A Y} t_{C L K_D E L A Y} + t_{D A T A_D E L A Y} < 4 - t_{T A P_D E L A Y}

The data + clock delay can be up to 4 ns for a 40 ns clock cycle.

Full-Speed Read Meeting Hold (Minimum Delay)

The following equations show how to calculate the allowed combined propagation delay range of the SD_CLK and SD_DAT/CMD signals on the PCB.

t_{C L K_D E L A Y} + t_{O H} + t_{D A T A_D E L A Y} + t_{T A P_D E L A Y} > t_{I H_F} t_{C L K_D E L A Y} + t_{D A T A_D E L A Y} > t_{I H_F} - t_{O H} - t_{T A P_D E L A Y} t_{C L K_D E L A Y} + t_{D A T A_D E L A Y} > 2 - t_{T A P_D E L A Y}

The data + clock delay must be greater than 2 ns if t_{TAP_DELAY} is not used.

If the t_{TAP_DELAY} is programmed to at least 2 ns, the data + clock delay must be greater than 0 ns (or less). This is always fulfilled.

AC Timing Specifications (High-Speed Mode)

Table 51.SDMMC Timing for High-Speed Mode
Parameter	Symbol	Values		Unit	Note/Test Condition
Parameter	Symbol	Min.	Max.	Unit	Note/Test Condition
Clock frequency in high speed transfer mode (1/t_pp )	f_pp CC	0	48	MHz
Clock cycle in high speed transfer mode	t_pp CC	20	–	ns
Clock low time	t_WL CC	7	–	ns
Clock high time	t_WH CC	7	–	ns
Clock rise time	t_TLH CC	–	3	ns
Clock fall time	t_THL CC	–	3	ns
Inputs setup to clock rising edge	t_{ISU_H} SR	2	–	ns
Inputs hold after clock rising edge	t_{IH_H} SR	2	–	ns
Outputs valid time in high speed mode	t_{ODLY_H} CC	–	14	ns
Outputs hold time in high speed mode	t_{OH_H} CC	2	–	ns

Table 52.SD Card Bus Timing for High-Speed Mode ⁷⁷
Parameter	Symbol	Values		Unit	Note/Test Condition
Parameter	Symbol	Min.	Max.	Unit	Note/Test Condition
SD card input setup time	t_ISU	6	–	ns
SD card input hold time	t_IH	2	–	ns
SD card output valid time	t_ODLY	–	14	ns
SD card output hold time	t_OH	2.5	–	ns

High-Speed Output Path (Write)

High-Speed Write Meeting Setup (Maximum Delay)

The following equations show how to calculate the allowed skew range between the SD_CLK and SD_DAT/CMD signals on the PCB.

No clock delay:

t_{O D L Y_H} + t_{D A T A_D E L A Y} + t_{T A P_D E L A Y} + t_{I S U} < t_{W L}

With clock delay:

t_{O D L Y_H} + t_{D A T A_D E L A Y} + t_{T A P_D E L A Y} + t_{I S U} < t_{W L} + t_{C L K_D E L A Y}

t_{D A T A_D E L A Y} + t_{T A P_D E L A Y} - t_{C L K_D E L A Y} < t_{W L} - t_{I S U} - t_{O D L Y_H} t_{D A T A_D E L A Y} - t_{C L K_D E L A Y} < t_{W L} - t_{I S U} - t_{O D L Y_H} - t_{T A P_D E L A Y} t_{D A T A_D E L A Y} - t_{C L K_D E L A Y} < 10 - 6 - 14 - t_{T A P_D E L A Y} t_{D A T A_D E L A Y} - t_{C L K_D E L A Y} < - 10 - t_{T A P_D E L A Y}

The data delay is less than the clock delay by at least 10 ns in the ideal case where t_WL = 10 ns.

High-Speed Write Meeting Hold (Minimum Delay)

The following equations show how to calculate the allowed skew range between the SD_CLK and SD_DAT/CMD signals on the PCB.

t_{C L K_D E L A Y} < t_{W L} + t_{O H_H} + t_{D A T A_D E L A Y} + t_{T A P_D E L A Y} - t_{I H} t_{C L K_D E L A Y} - t_{D A T A_D E L A Y} < t_{W L} + t_{O H_H} + t_{T A P_D E L A Y} - t_{I H} t_{C L K_D E L A Y} - t_{D A T A_D E L A Y} < 10 + 2 + t_{T A P_D E L A Y} - 2 t_{C L K_D E L A Y} - t_{D A T A_D E L A Y} < 10 + t_{T A P_D E L A Y}

The clock can be delayed versus data up to 13.2 ns (external delay line) in ideal case of t_WL = 10 ns, with maximum t_{TAP_DELAY} = 3.2 ns programmed.

High-Speed Input Path (Read)

High-Speed Read Meeting Setup (Maximum Delay)

The following equations show how to calculate the allowed combined propagation delay range of the SD_CLK and SD_DAT/CMD signals on the PCB.

t_{C L K_D E L A Y} + t_{D A T A_D E L A Y} + t_{T A P_D E L A Y} + t_{O D L Y} + t_{I S U_H} < t_{p p} t_{C L K_D E L A Y} + t_{D A T A_D E L A Y} < t_{p p} - t_{O D L Y} - t_{I S U_H} - t_{T A P_D E L A Y} t_{C L K_D E L A Y} + t_{D A T A_D E L A Y} < 20 - 14 - 2 - t_{T A P_D E L A Y} t_{C L K_D E L A Y} + t_{D A T A_D E L A Y} < 4 - t_{T A P_D E L A Y}

The data + clock delay can be up to 4 ns for a 20 ns clock cycle.

High-Speed Read Meeting Hold (Minimum Delay)

The following equations show how to calculate the allowed combined propagation delay range of the SD_CLK and SD_DAT/CMD signals on the PCB.

t_{C L K_D E L A Y} + t_{O H} + t_{D A T A_D E L A Y} + t_{T A P_D E L A Y} > t_{I H_H} t_{C L K_D E L A Y} + t_{D A T A_D E L A Y} > t_{I H_H} - t_{O H} - t_{T A P_D E L A Y} t_{C L K_D E L A Y} + t_{D A T A_D E L A Y} > 2 - 2.5 - t_{T A P_D E L A Y} t_{C L K_D E L A Y} + t_{D A T A_D E L A Y} > - 0.5 - t_{T A P_D E L A Y}

The data + clock delay must be greater than -0.5 ns for a 20 ns clock cycle. This is always fulfilled.

USB Interface Characteristics

The Universal Serial Bus (USB) Interface is compliant to the USB Rev. 2.0 Specification and the OTG Specification Rev. 1.3. High-Speed Mode is not supported.

Note:

These parameters are not subject to production test, but verified by design and/or characterization.

Table 53.USB Timing Parameters (operating conditions apply)
Parameter	Symbol	Values			Unit	Note/Test Condition
Parameter	Symbol	Min.	Typ.	Max.	Unit	Note/Test Condition
Rise time	t_R CC	4	–	20	ns	C_L = 50 pF
Fall time	t_F CC	4	–	20	ns	C_L = 50 pF
Rise/Fall time matching	t_R / t_F CC	90	–	111.11	%	C_L = 50 pF
Crossover voltage	V_CRS CC	1.3	–	2.0	V	C_L = 50 pF

Ethernet Interface (ETH) Characteristics

For proper operation of the Ethernet Interface it is required that f_SYS ≥ 100 MHz.

Note:

These parameters are not subject to production test, but verified by design and/or characterization.

ETH Measurement Reference Points

ETH Management Signal Parameters (ETH_MDC, ETH_MDIO)

Table 54.ETH Management Signal Timing Parameters
Parameter	Symbol	Values			Unit	Note/Test Condition
Parameter	Symbol	Min.	Typ.	Max.	Unit	Note/Test Condition
ETH_MDC period	t₁ CC	400	–	–	ns	C_L = 25 pF
ETH_MDC high time	t₂ CC	160	–	–	ns
ETH_MDC low time	t₃ CC	160	–	–	ns
ETH_MDIO setup time (output)	t₄ CC	10	–	–	ns
ETH_MDIO hold time (output)	t₅ CC	10	–	–	ns
ETH_MDIO data valid (input)	t₆ SR	0	–	300	ns

ETH RMII Parameters

In the following, the parameters of the RMII (Reduced Media Independent Interface) are described.

Table 55.ETH RMII Signal Timing Parameters
Parameter	Symbol	Values			Unit	Note/Test Condition
Parameter	Symbol	Min.	Typ.	Max.	Unit	Note/Test Condition
ETH_RMII_REF_CL clock period	t₁₃ SR	20	–	–	ns	C_L = 25 pF; 50 ppm
ETH_RMII_REF_CL clock high time	t₁₄ SR	7	–	13	ns	C_L = 25 pF
ETH_RMII_REF_CL clock low time	t₁₅ SR	7	–	13	ns
ETH_RMII_RXD[1:0], ETH_RMII_CRS setup time	t₁₆ SR	4	–	–	ns
ETH_RMII_RXD[1:0], ETH_RMII_CRS hold time	t₁₇ SR	2	–	–	ns
ETH_RMII_TXD[1:0], ETH_RMII_TXEN data valid	t₁₈ CC	4	–	15	ns

EtherCAT (ECAT) Characteristics

ECAT Measurement Reference Points

ETH Management Signal Parameters (MCLK, MDIO)

Table 56.ECAT Management Signal Timing Parameters
Parameter	Symbol	Values			Unit	Note/Test Condition
Parameter	Symbol	Min.	Typ.	Max.	Unit	Note/Test Condition
ECAT_MCLK period	t_MCLK CC	–	400	–	ns	IEEE802.3 requirement (2.5 MHz) C_L = 25 pF
ECAT_MCLK high time	t_{MCLK_h} CC	160	–	–	ns
ECAT_MCLK low time	t_{MCLK_l} CC	160	–	–	ns
ECAT_MDIO setup time (output)	t_{D_setup} CC	10	–	–	ns
ECAT_MDIO hold time (output)	t_{D_hold} CC	10	–	–	ns
ECAT_MDIO data valid (input)	t_{D_valid} SR	0	–	300	ns

Figure 39. ECAT Management Signal Timing

MII Timing TX Characteristics

Table 57.ETH MII TX Signal Timing Parameters
Parameter	Symbol	Values			Unit	Note/Test Condition
Parameter	Symbol	Min.	Typ.	Max.	Unit	Note/Test Condition
PHY_CLK25, TX_CLK period	t_{TX_CLK} SR	–	40	–	ns
Delay between PHY clock source PHY_CLK25 and TX_CLK output of the PHY	t_{PHY_delay} SR	–	–	–	ns	PHY dependent
PHY setup requirement: TXEN/TXD[3:0] with respect to TX_CLK	t_{TX_setup} SR	15	–	0	ns	PHY dependent IEEE802.3 limit is 15 ns
PHY hold requirement: TXEN/TXD[3:0] with respect to TX_CLK	t_{TX_hold} CC	0	–	25	ns	PHY dependent IEEE802.3 limit is 0 ns

Note:

ECAT0_CONPx.TX_SHIFT can be adjusted by displaying TX_CLK of a PHY and TXEN/TXD[3:0] on an oscilloscope. TXEN/TXD[3:0] is allowed to change between 0 ns and 25 ns after a rising edge of TX_CLK (according to IEEE802.3 – check your PHY’s documentation). Configure TX_SHIFT so that TXEN/TXD[3:0] change near the middle of this range. It is sufficient to check just one of the TXEN/TXD[3:0] signals, because they are nearly generated at the same time.

MII Timing RX Characteristics

Table 58.ETH MII RX Signal Timing Parameters
Parameter	Symbol	Values			Unit	Note/Test Condition
Parameter	Symbol	Min.	Typ.	Max.	Unit	Note/Test Condition
RX_CLK period	t_{RX_CLK} SR	–	40	–	ns	C_L = 25 pF, IEEE802.3 requirement
RX_DV/RX_DV/RXD[3:0] valid before rising edge of RX_CLK	t_{RX_setup} SR	10	–	–	ns
RX_DV/RX_DV/RXD[3:0] valid after rising edge of RX_CLK	t_{RX_hold} SR	10	–	–	ns

Sync/Latch Timings

Table 59.Sync/Latch Timings
Parameter	Symbol	Values			Unit	Note/Test Condition
Parameter	Symbol	Min.	Typ.	Max.	Unit	Note/Test Condition
SYNC0/1	t_{DC_SYNC_Jitter} SR	–	–	11 + m ⁷⁸	ns
LATCH0/1	t_{DC_LATCH} SR	12 + n ⁷⁹	–	–	ns

Note:

SYNC0/1 pulse length are initially loaded by EEPROM content ADR 0x0002. The actual used value can be read back from Register DC_PULSE_LEN.

Package and Reliability

The XMC4300 is a member of the XMC4000 Family of microcontrollers. It is also compatible to a certain extent with members of similar families or subfamilies.

Each package is optimized for the device it houses. Therefore, there may be slight differences between packages of the same pin-count but for different device types. In particular, the size of the Exposed Die Pad may vary.

If different device types are considered or planned for an application, it must be ensured that the board layout fits all packages under consideration.

Package Parameters

Table 60

provides the thermal characteristics of the packages used in XMC4300.

Table 60.Thermal Characteristics of the Packages
Parameter	Symbol	Limit Values		Unit	Package Types
Parameter	Symbol	Min.	Max.	Unit	Package Types
Exposed Die Pad dimensions including U-Groove	Ex × Ey CC	–	7.0 × 7.0	mm	PG-LQFP-100-25
Exposed Die Pad dimensions excluding U-Groove	Ax × Ay CC	–	6.2 × 6.2	mm	PG-LQFP-100-25
Exposed Die Pad dimensions	–	–	7.0 × 7.0	mm	PG-LQFP-100-29
Thermal resistance Junction-Ambient T_J ≤ 150°C	R_ΘJA CC	–	22.5	K/W	PG-LQFP-100-25 PG-LQFP-100-29 ⁸⁰

Note:

For electrical reasons, it is required to connect the exposed pad to the board ground V_SS , independent of EMC and thermal requirements.

Thermal Considerations

When operating the XMC4300 in a system, the total heat generated in the chip must be dissipated to the ambient environment to prevent overheating and the resulting thermal damage.

The maximum heat that can be dissipated depends on the package and its integration into the target board. The “Thermal resistance R_ΘJA ” quantifies these parameters. The power dissipation must be limited so that the average junction temperature does not exceed 150°C.

The difference between junction temperature and ambient temperature is determined by

ΔT = (P_INT + P_IOSTAT + P_IODYN) × R_ΘJA

The internal power consumption is defined as

P_INT = V_DDP × I_DDP (switching current and leakage current).

The static external power consumption caused by the output drivers is defined as

P_IOSTAT = Σ((V_DDP - V_OH) × I_OH) + Σ(V_OL × I_OL)

The dynamic external power consumption caused by the output drivers (P_IODYN) depends on the capacitive load connected to the respective pins and their switching frequencies.

If the total power dissipation for a given system configuration exceeds the defined limit, countermeasures must be taken to ensure proper system operation:

Reduce V_DDP , if possible in the system
Reduce the system frequency
Reduce the number of output pins
Reduce the load on active output drivers

Package Outlines

The exposed die pad dimensions are listed in

Table 60

Figure 43. PG-LQFP-100-25 (Plastic Green Low Profile Quad Flat Package)

Figure 44. PG-LQFP-100-29 (Plastic Green Low Profile Quad Flat Package)

All dimensions in mm.

You can find complete information about Infineon packages, packing and marking in our Infineon Internet Page “Packages”:

http://www.infineon.com/packages

Quality Declarations

The qualification of the XMC4300 is executed according to the JEDEC standard JESD471.

Note:

For automotive applications refer to the Infineon automotive microcontrollers.

Table 61.Quality Parameters
Parameter	Symbol	Values			Unit	Note/Test Condition
Parameter	Symbol	Min.	Typ.	Max.	Unit	Note/Test Condition
Operation lifetime	t_OP CC	20	–	–	a	T_J ≤ 109°C, device permanent on
ESD susceptibility according to Human Body Model (HBM)	V_HBM SR	–	–	3000	V	EIA/JESD22-A114-B
ESD susceptibility according to Charged Device Model (CDM)	V_CDM SR	–	–	1000	V	Conforming to JESD22-C101-C
Moisture sensitivity level	MSL CC	–	–	3	–	JEDEC J-STD-020D
Soldering temperature	T_SDR SR	–	–	260	°C	Profile according to JEDEC J-STD-020D

Revision history


Document revision	Date	Description of changes
V1.2	2023-04-01	Summary of Features : Updated number of breakpoints from 8 to 6. Table 60 : Added PG-LQFP-100-29 details. Figure 44 : Added package diagram: PG-LQFP-100-29.
V1.3	2024-11-25	Template update; no content update

x is a placeholder for the supported temperature range.

⁴

Some pins in a package may be connected to more than one channel. For the detailed mapping see the Port I/O Function table.

⁵

The port groups are defined in

Pin Reliability in Overload

⁶

The port groups are defined in

Table 16

⁷

See also the Supply Monitoring thresholds,

Power-Up and Supply Monitoring

⁸

Voltage overshoot to 4.0 V is permissible at Power-Up and $\bar{P O R S T}$ low, provided the pulse duration is less than 100 μs and the cumulated sum of the pulses does not exceed 1 h over lifetime.

⁹

To start the hibernate domain it is required that V_BAT ≥ 2.1 V, for a reliable start of the oscillation of RTC_XTAL in crystal mode it is required that V_BAT ≥ 3.0 V.

¹⁰

The port groups are defined in

Table 16

¹¹

Current required to override the pull device with the opposite logic level (“force current”). With active pull device, at load currents between force and keep current the input state is undefined.

¹²

Load current at which the pull device still maintains the valid logic level (“keep current”). With active pull device, at load currents between force and keep current the input state is undefined.

¹³

Hysteresis is implemented to avoid metastable states and switching due to internal ground bounce. It can not be guaranteed that it suppresses switching due to external system noise.

¹⁴

POD = Pin Out Driver

¹⁵

POD = Pin Out Driver

¹⁶

Hysteresis is implemented to avoid metastable states and switching due to internal ground bounce. It can not be guaranteed that it suppresses switching due to external system noise.

¹⁷

Applies to AINx, when used as alternate reference input.

¹⁸

A running conversion may become imprecise in case the normal conditions are violated (voltage overshoot).

¹⁹

If the analog reference voltage is below VDDA, then the ADC converter errors increase. If the reference voltage is reduced by the factor k (k<1), TUE, DNL, INL, Gain, and Offset errors increase also by the factor 1/k.

²⁰

The leakage current definition is a continuous function, as shown in figure ADCx Analog Inputs Leakage. The numerical values defined determine the characteristic points of the given continuous linear approximation - they do not define step function (see

Figure 12

²¹

The sampling capacity of the conversion C-network is pre-charged to V_AREF /2 before the sampling moment. Because of the parasitic elements, the voltage measured at AINx can deviate from V_AREF /2.

²²

This represents an equivalent switched capacitance. This capacitance is not switched to the reference voltage at once. Instead, smaller capacitances are successively switched to the reference voltage.

²³

For 10-bit conversions, the errors are reduced to 1/4; for 8-bit conversions, the errors are reduced to 1/16. Never less than ±1 LSB.

²⁴

The sum of DNL/INL/GAIN/OFF errors does not exceed the related total unadjusted error TUE.

²⁵

This parameter is valid for soldered devices and requires careful analog board design.

²⁶

Resulting worst case combined error is arithmetic combination of TUE and EN_RMS .

²⁷

Value is defined for one sigma Gauss distribution.

²⁸

The resulting current for a conversion can be calculated with I_AREF = Q_CONV / t_c. The fastest 12-bit post-calibrated conversion of t_c = 459 ns results in a typical average current of I_AREF = 65.4 μA.

²⁹

Always the standard VADC reference, alternate references do not apply to the ORC.

³⁰

At V_{DDP_max} = 3.63 V the typical offset error increases by an additional Δ T_OE = ±1°C.

³¹

Measured at A-connector with 1.5 kOhm ± 5% to 3.3 V ± 0.3 V connected to USB_DP or USB_DM and at B-connector with 15 kOhm ± 5% to ground connected to USB_DP and USB_DM.

³²

t_OSCS is defined from the moment the oscillator is enabled with SCU_OSCHPCTRL.MODE until the oscillations reach an amplitude at XTAL1 of 0.4 * V_DDP .

³³

The external oscillator circuitry must be optimized by the customer and checked for negative resistance and amplitude as recommended and specified by crystal suppliers.

³⁴

If the shaper unit is enabled and not bypassed.

³⁵

If the shaper unit is bypassed, dedicated DC-thresholds have to be met.

³⁶

t_OSCS is defined from the moment the oscillator is enabled by the user with SCU_OSCULCTRL.MODE until the oscillations reach an amplitude at RTC_XTAL1 of 400 mV.

³⁷

The external oscillator circuitry must be optimized by the customer and checked for negative resistance and amplitude as recommended and specified by crystal suppliers.

³⁸

For a reliable start of the oscillation in crystal mode it is required that V_BAT ≥ 3.0 V. A running oscillation is maintained across the full V_BAT voltage range.

³⁹

If the shaper unit is enabled and not bypassed.

⁴⁰

If the shaper unit is bypassed, dedicated DC-thresholds have to be met.

⁴¹

Hysteresis is implemented to avoid metastable states and switching due to internal ground bounce. It can not be guaranteed that it suppresses switching due to external system noise.

⁴²

CPU executing code from Flash, all peripherals idle.

⁴³

I_DDP decreases typically by approximately 5 mA when f_SYS decreases by 10 MHz, at constant T_J .

⁴⁴

CPU executing code from Flash.

⁴⁵

CPU in sleep, all peripherals idle, Flash in Active mode.

⁴⁶

CPU in sleep, Flash in Active mode.

⁴⁷

CPU in sleep, peripherals disabled, after wake-up code execution from RAM.

⁴⁸

To wake-up the Flash from its Sleep mode, f_CPU ≥ 1 MHz is required.

⁴⁹

OSC_ULP operating with external crystal on RTC_XTAL.

⁵⁰

OSC_ULP off, Hibernate domain operating with OSC_SI clock.

⁵¹

V_BAT supplied, but Hibernate domain not started; for example state after factory assembly.

⁵²

Test Power Loop: f_SYS = 144 MHz, CPU executing benchmark code from Flash, all CCUs in 100 kHz timer mode, all ADC groups in continuous conversion mode, USICs as SPI in internal loop-back mode, CAN in 500 kHz internal loop-back mode, interrupt triggered DMA block transfers to parity protected RAMs and FCE, DTS measurements and FPU calculations.

The power consumption of each customer application will most probably be lower than this value, but must be evaluated separately.

⁵³

Sum of currents of all active converters (ADC and DAC).

⁵⁴

Enabling the f_CCU clock for the CCU4x/CCU8x modules adds approximately I_PER = 4.8 mA, disregarding which and how many of those peripherals are enabled.

⁵⁵

The current consumption of the analog components are given in the dedicated Datasheet sections of the respective peripheral.

⁵⁶

In case the Program Verify feature detects weak bits, these bits will be programmed once more. The reprogramming takes an additional time of 5.5 ms.

⁵⁷

The following formula applies to the wait state configuration: FCON.WSPFLASH × (1/ f_CPU ) ≥ t_a .

⁵⁸

Storage and inactive time included.

⁵⁹

Values given are valid for an average weighted junction temperature of T_J = 110°C.

⁶⁰

Only valid with robust EEPROM emulation algorithm, equally cycling the logical sectors. For more details see the Reference Manual.

⁶¹

Minimum threshold for reset assertion.

⁶²

Maximum threshold for reset deassertion.

⁶³

The V_DDP monitoring has a typical hysteresis of V_PORHYS = 180 mV.

⁶⁴

If t_PR is not met, low spikes on $\bar{P O R S T}$ may be seen during start up (e.g. reset pulses generated by the supply monitoring due to a slow ramping V_DDP ).

⁶⁵

50% for even K2 divider values, 50±(10/K2) for odd K2 divider values.

⁶⁶

Error in addition to the accuracy of the reference clock.

⁶⁷

Automatic calibration compensates variations of the temperature and in the V_DDP supply voltage.

⁶⁸

Deviations from the nominal V_DDP voltage induce an additional error to the uncalibrated and/or factory calibrated oscillator frequency.

⁶⁹

The falling edge on TCK is used to generate the TDO timing.

⁷⁰

The setup time for TDO is given implicitly by the TCK cycle time.

⁷¹

t_PB = 1/ f_PB

⁷²

This input timing is valid for asynchronous input signal handling of slave select input, shift clock input, and receive data input (bits DXnCR.DSEN = 0).

⁷³

Due to the wired-AND configuration of an IIC bus system, the port drivers of the SCL and SDA signal lines need to operate in open-drain mode. The high level on these lines must be held by an external pull-up device, approximately 10 kOhm for operation at 100 kbit/s, approximately 2 kOhm for operation at 400 kbit/s.

⁷⁴

⁷⁵

C_b refers to the total capacitance of one bus line in pF.

⁷⁶

Reference card timing values for calculation examples. Not subject to production test and not characterized.

⁷⁷

Reference card timing values for calculation examples. Not subject to production test and not characterized.

⁷⁸

additional delay form logic and pad, number is added after characterization

⁷⁹

additional shaping delay, number is added after characterization

⁸⁰

Device mounted on a 4-layer JEDEC board (JESD 51-7) with thermal vias; exposed pad soldered.

About this Document​

XMC4000 Family User Documentation​

Summary of Features​

CPU Subsystem​

On-Chip Memories​

Communication Peripherals​

Analog Frontend Peripherals​

Industrial Control Peripherals​

Input/Output Lines​

On-Chip Debug Support​

Ordering Information​

Device Types​

Device Type Features​

Definition of Feature Variants​

Identification Registers​

General Device Information​

Logic Symbols​

Pin Configuration and Definition​

Package Pin Summary

Port I/O Functions

Port I/O Function Table

Power Connection Scheme​

Electrical Parameters​

General Parameters​

Parameter Interpretation

Absolute Maximum Ratings

Pin Reliability in Overload

Pad Driver and Pad Classes Summary

Operating Conditions

DC Parameters​

Input/Output Pins

Analog to Digital Converters (VADC)

Conversion Time

Conversion Time Examples

Digital to Analog Converters (DAC)

Conversion Calculation

Out-of-Range Comparator (ORC)

Die Temperature Sensor

USB OTG Interface DC Characteristics

Oscillator Pins

Power Supply Current

Peripheral Idle Currents

Flash Memory Parameters

AC Parameters​

Testing Waveforms

Power-Up and Supply Monitoring

Power Sequencing

Positive Load Step Examples

Phase Locked Loop (PLL) Characteristics

Main and USB PLL

Internal Clock Source Characteristics

Fast Internal Clock Source

Slow Internal Clock Source

JTAG Interface Timing

Serial Wire Debug Port (SW-DP) Timing

Peripheral Timing

Synchronous Serial Interface (USIC SSC) Timing

Inter-IC (IIC) Interface Timing

Inter-IC Sound (IIS) Interface Timing

SDMMC Interface Timing

AC Timing Specifications (Full-Speed Mode)

Full-Speed Output Path (Write)

Full-Speed Write Meeting Setup (Maximum Delay)

Full-Speed Write Meeting Hold (Minimum Delay)

Full-Speed Input Path (Read)

Full-Speed Read Meeting Setup (Maximum Delay)

Full-Speed Read Meeting Hold (Minimum Delay)

AC Timing Specifications (High-Speed Mode)

High-Speed Output Path (Write)

High-Speed Write Meeting Setup (Maximum Delay)

High-Speed Write Meeting Hold (Minimum Delay)

High-Speed Input Path (Read)

High-Speed Read Meeting Setup (Maximum Delay)

High-Speed Read Meeting Hold (Minimum Delay)

USB Interface Characteristics

Ethernet Interface (ETH) Characteristics

ETH Measurement Reference Points

ETH Management Signal Parameters (ETH_MDC, ETH_MDIO)

ETH RMII Parameters

EtherCAT (ECAT) Characteristics

About this Document

XMC4000 Family User Documentation

Summary of Features

CPU Subsystem

On-Chip Memories

Communication Peripherals

Analog Frontend Peripherals

Industrial Control Peripherals

Input/Output Lines

On-Chip Debug Support

Ordering Information

Device Types

Device Type Features

Definition of Feature Variants

Identification Registers

General Device Information

Logic Symbols

Pin Configuration and Definition

Power Connection Scheme

Electrical Parameters

General Parameters

DC Parameters

AC Parameters

Package and Reliability

Package Parameters

Package Outlines

Quality Declarations

Revision history