Based on volume experience and compatibility know-how, we introduced the revolutionary

CoolSiC™ MOSFET technology

which enables radically new product designs. In comparison to traditional silicon-based switches like IGBTs and MOSFETs, the SiC power MOSFET offers a series of advantages. SiC CoolSiC™ MOSFET technology represents the best performance, reliability, and ease of use for system designers. SiC power transistors open up new degrees of flexibility for designers to harness never-before-seen levels of efficiency and reliability. High-voltage CoolSiC™ MOSFET technology has also provided impressive improvements in reverse recovery characteristics.

CoolSiC™ MOSFETs from Infineon provide high efficiency and optimal reliability. Our range of products is available in discrete housing as well as modules in

400 V

,

650 V

,

750 V

,

1200 V

,

1700 V

,

2000 V

,

2300 V

and

3300 V

voltage classes. The SiC MOSFET power modules come in three-level, fourpack, half-bridge, sixpack, and booster configurations.

Highlights of the CoolSiC™ MOSFETs​

CoolSiC™ MOSFET offers a series of advantages as follows:

  • The lowest gate charge and device capacitance levels seen in SiC switches

  • No reverse recovery losses of the anti-parallel diode

  • Temperature-independent low switching losses

  • Threshold-free on-state characteristics

Infineon’s unique CoolSiC™ MOSFET adds additional advantages:

  • Superior gate oxide reliability enabled by state-of-the-art trench design

  • Best-in-class switching and conduction losses

  • Highest transconductance level (gain)

  • A threshold voltage Vth of 4 V

  • Short-circuit robustness

Benefits, features, and applications​

The CoolSiC™ MOSFETs offer the highest efficiency for reduced cooling effort, a longer lifetime, and higher reliability. They also provide higher frequency operation, a reduction in system cost, increased power density, a reduced system complexity, as well as the ease of design and implementation.

The key benefits are the low device capacitances, temperature-independent switching losses, intrinsic diode with low reverse recovery charge, and threshold-free on-state characteristics. The CoolSiC™ MOSFETs can be used in several applications, for example, photovoltaic inverters, battery charging and formation, server and telecom power, servo and motor drives, energy storage and UPS, industrial SMPs, and auxiliary power supplies.

CoolSiC™ MOSFET in discrete and module housings​

The TO-247 4 pin package contains an additional connection to the source (Kelvin connection) that is used as a reference potential for the gate driving voltage, thereby eliminating the effect of voltage drops over the source inductance. The result is even lower switching losses than for the TO-247 3 pin version, especially at higher currents and higher switching frequencies. CoolSiC™ MOSFET Easy modules offer a very good thermal interface, a low stray inductance and a robust design, as well as PressFIT connections. While low-power ranges can be ideally addressed with the Easy family, medium-power inverters of 250+ kW can best make use of the 62 mm package. The HybridPACK™ drive CoolSiC™ MOSFETs are AQG-324 qualified and optimized for high-power automotive traction inverters of 180+ kW. It is an easy-to-mount six-pack module designed for direct water cooling, featuring a pin-fin baseplate and supporting an efficient, high-volume–optimized assembly process.